AlGaN/GaN HEMTs on SiC with fT of over 120 GHz

IEEE Electron Device Letters

Volumn 23, Issue 8, 2002, Pages 455-457

  Kumar, V ^b   Lu, W ^b   Schwindt, R ^b   Kuliev, A ^b   Simin, G ^c   Yang, J ^c   Khan, M Asif ^c   Adesida, Ilesanmi ^a,b  

^a IEEE

^b University of Illinois at Urbana Champaign   (United States)

^c University of South Carolina   (United States)

Author keywords

GaN; High electron mobility transistors (HEMTs); SiC

Indexed keywords

CURRENT DENSITY; GATES (TRANSISTOR); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DRAIN CURRENT DENSITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036686431     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.801303     Document Type: Article

References (11)

1. Very-high power density AlGaN/GaN HEMTs
2. High power microwave GaN/AlGaN HEMTs on silicon carbide
3. High performance microwave power GaN/AlGaN MODFETs grown by RF- assisted MBE
4. High breakdown GaN HEMT with overlapping gate structure
5. High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates
6. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs
7. T of 110 GHz
8. T > 60 GHz
9. AlGaN/GaN Metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates
10. The effects of reactive ion etching-induced damage on the characterstics of ohmic contacts to n-type GaN
11. DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates