Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region

Applied Physics Letters

Volumn 78, Issue 25, 2001, Pages 3927-3928

  Nishida, Toshio ^a   Saito, Hisao ^a   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039886767     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1377854     Document Type: Article

References (6)

1. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, Appl. Phys. Lett. 67, 1868 (1993).
2. N. F. Gardner, H. C. Chui, E. I. Chen, M. R. Krames, J.-W. Huang, F. A. Kish, S. A. Stockman, C. P. Kocot, T. S. Tan, and N. Moll, Appl. Phys. Lett. 74, 2230 (1999).
3. T. Nishida and N. Kobayashi, Phys. Status Solidi A 176, 45 (1999).
4. T. Nishida, H. Saito, and N. Kobayashi, Appl. Phys. Lett. 78, 399 (2001).
5. M. D. Bremser, W. G. Perry, T. Zheleva, N. V. Edwards, O. H. Nam, N. Parikh, D. E. Aspnes, and R. F. Davis, Internet J. Nitride Semicond. Res. 1, 8 (1996).
6. T. Nishida, H. Saito, K. Kumakura, T. Makimoto, and N. Kobayashi, IPAP Conf. Ser. 1, 872 (2000).