GaN/AlGaN high electron mobility transistors with fτ of 110 GHz

Electronics Letters

Volumn 36, Issue 4, 2000, Pages 358-359

  Micovic, M ^a   Nguyen, N X ^a   Janke, P ^a   Wong, W S ^a   Hashimoto, P ^a   McCray, L M ^a   Nguyen, C ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT DENSITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

DRAIN CURRENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033882164     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000296     Document Type: Article

References (8)

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2. WU, Y.-F., KELLER, B.P., KELLER, S., NGUYEN, N.X., LE, M., NGUYEN, C., JENKINS, T.J., KEHIAS, L.T., DENBAARS, S.P., and MISHRA, U.K.: 'High speed and high power AlGaN/GaN MODFETs'. 55th Annual Device Research Conf., 1997, Forth Collins, CO
3. 0.5N/GaN MODFETs with power density > 3W/mm at 18GHz', Electron. Lett.. 1997, 33, pp. 1742-1743
4. GASKA, R., CHEN, Q., YANG, J., KHAN, A.M., SHUR, M.S., PING, A., and ADESIDA, I.: 'AlGaN-GaN heterostructure FETs with offset gate design', Electron. LeIt., 1997, 33, pp. 1255-1257
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7. CHU, K., SMART, J., GREEN, B., CHUMBES, E., WEIMANN, N., SHEALY, J.R., and EASTMAN, L.F.: 'Undoped AlGaN/GaN/SiC HEMT', to be published in IEEE Electron. Device Lett.
8. EASTMAN, L.F., CHU, K., SMART, J., and SHEALY, J.R.: 'GaN materials for high power microwave amplifiers'. Mater. Res. Soc. Symp. Proc., 1998, Vol. 512, (3), pp. 3-7