RESURF AlGaN/GaN HEMT for high voltage power switching

IEEE Electron Device Letters

Volumn 22, Issue 8, 2001, Pages 373-375

  Karmalkar, Shreepad ^b,c   Deng, Jianyu ^c   Shur, Michael S ^a,c   Gaska, Remis ^d  

^a IEEE

^b INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^d SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

Breakdown voltage; Field plate; GaN HEMT; RESURF concept

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SWITCHING;

HIGH VOLTAGE POWER SWITCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035423476     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.936347     Document Type: Article

References (12)

1. Trends in power semiconductor devices
2. High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates
3. Experimental evaluation of impact ionization coefficients in GAN
4. High breakdown GaN HEMT with overlapping gate structure
5. AlGaN/GaN heterostructure FET's with offset gate design
6. 2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates
7. High breakdown voltage GaN HFET with field plate
8. Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate
9. Very high voltage AlGaN/GaN HEMT's using a field plate deposited on a stepped insulator
10. High voltage thin layer devices
11. A review of RESURF technology