Use of TiB 2 diffusion barriers for Ni/Au ohmic contacts on p-GaN

Applied Surface Science

Volumn 253, Issue 3, 2006, Pages 1255-1259

  Voss, Lars ^a   Khanna, Rohit ^a   Pearton, S J ^a   Ren, F ^b   Kravchenko, I I ^c  

^a UNIVERSITY OF FLORIDA   (United States)

^b University of Florida   (United States)

^c NONE   (United States)

Author keywords

Annealing; GaN; Ohmic contacts

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; GALLIUM NITRIDE; GOLD; NICKEL; OHMIC CONTACTS;

CONTACT RESISTANCE MEASUREMENTS; DIFFUSION BARRIERS; P-GAN; TIB2;

TITANIUM COMPOUNDS;

EID: 33750697592     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.01.080     Document Type: Article

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