SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 84, Issue 9, 2004, Pages 1501-1503

Electrical properties of Pt contacts on p-GaN activated in air

(2) Lin, Yow Jon a Wu, Kuo Chen a

a FENG CHIA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ACTIVATION; DEPOSITION; DESORPTION; FERMI LEVEL; GALLIUM NITRIDE; HOLE MOBILITY; HYDROGENATION; INTERFACES (MATERIALS); LIGHT EMITTING DIODES; PERMITTIVITY; PHOTOLUMINESCENCE; PLATINUM; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS;

EPITAXIAL LAYERS; HOLE CONCENTRATION; TUNNELING TRANSMISSION;

OHMIC CONTACTS;

EID: 1642588403 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1651658 Document Type: Article

Times cited : (11)

References (13)

1
- 20944451301
- SPIE, Bellingham, WA
- M. Osiński, Gallium-Nitride-based Technologies (SPIE, Bellingham, WA, 2002).
- (2002) Gallium-nitride-based Technologies
- Osiński, M.¹

2
- 0004167140
- Springer, Berlin
- H. Morkoç, Nitride Semiconductors and Devices (Springer, Berlin, 1999).
- (1999) Nitride Semiconductors and Devices
- Morkoç, H.¹

3
- 0029389357
- S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, Jpn. J. Appl. Phys., Part 2 34, L1332 (1995).
- (1995) Jpn. J. Appl. Phys., Part 2 , vol.34
- Nakamura, S.¹ Senoh, M.² Iwasa, N.³ Nagahama, S.⁴ Yamada, T.⁵ Mukai, T.⁶

4
- 0033079415
- J. L. Lee, J. K. Kim, J. W. Lee, Y. J. Park, and T. Kim, Solid-State Electron. 43, 435 (1999).
- (1999) Solid-state Electron. , vol.43 , pp. 435
- Lee, J.L.¹ Kim, J.K.² Lee, J.W.³ Park, Y.J.⁴ Kim, T.⁵

5
- 0035274131
- J. K. Kim, K. J. Kim, B. Kim, J. N. Kim, J. S. Kwak, Y. J. Park, and J. L. Lee, J. Electron. Mater. 30, 129 (2001).
- (2001) J. Electron. Mater. , vol.30 , pp. 129
- Kim, J.K.¹ Kim, K.J.² Kim, B.³ Kim, J.N.⁴ Kwak, J.S.⁵ Park, Y.J.⁶ Lee, J.L.⁷

6
- 0034206715
- J. L. Lee and J. K. Kim, J. Electrochem. Soc. 147, 2297 (2000).
- (2000) J. Electrochem. Soc. , vol.147 , pp. 2297
- Lee, J.L.¹ Kim, J.K.²

7
- 0037097904
- S. M. Jeong, H. W. Shim, H. S. Yoon, M. G. Cheong, R. J. Choi, E.-K. Suh, and H. J. Lee, J. Appl. Phys. 91, 9711 (2002).
- (2002) J. Appl. Phys. , vol.91 , pp. 9711
- Jeong, S.M.¹ Shim, H.W.² Yoon, H.S.³ Cheong, M.G.⁴ Choi, R.J.⁵ Suh, E.-K.⁶ Lee, H.J.⁷

8
- 1642593610
- note
- Y. J. Lin (published). The formation of the hydrogenated Ga vacancies during the activation process under air ambient has been investigated by secondary ion mass spectroscopy.

9
- 0242580893
- O. Gelhausen, H. N. Klein, M. R. Phillips, and E. M. Goldys, Appl. Phys. Lett. 83, 3293 (2003).
- (2003) Appl. Phys. Lett. , vol.83 , pp. 3293
- Gelhausen, O.¹ Klein, H.N.² Phillips, M.R.³ Goldys, E.M.⁴

10
- 0000869373
- C. G. Van de Walle, Phys. Rev. B 56, R10020 (1997).
- (1997) Phys. Rev. B , vol.56
- Van de Walle, C.G.¹

11
- 0037326627
- J. K. Kim and J. L. Lee, J. Electrochem. Soc. 150, G209 (2003).
- (2003) J. Electrochem. Soc. , vol.150
- Kim, J.K.¹ Lee, J.L.²

12
- 0001554974
- L. Zhou, W. Lanford, A. T. Ping, I. Adesida, J. W. Yang, and A. Khan, Appl. Phys. Lett. 76, 3451 (2000).
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3451
- Zhou, L.¹ Lanford, W.² Ping, A.T.³ Adesida, I.⁴ Yang, J.W.⁵ Khan, A.⁶

13
- 0000928891
- D. C. Look, D. C. Reynolds, U. W. Hemsky, J. R. Sizelove, R. L. Jones, and R. J. Molnar, Phys. Rev. Lett. 79, 2273 (1997).
- (1997) Phys. Rev. Lett. , vol.79 , pp. 2273
- Look, D.C.¹ Reynolds, D.C.² Hemsky, U.W.³ Sizelove, J.R.⁴ Jones, R.L.⁵ Molnar, R.J.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.