In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation

Applied Physics Letters

Volumn 82, Issue 5, 2003, Pages 736-738

  Tang, H ^a   Bardwell, J A ^a   Webb, J B ^a   Rolfe, S ^a   Liu, Y ^a   Moisa, S ^a   Sproule, I ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ANNEALING; FERMI LEVEL; GROWTH (MATERIALS); MAGNESIUM PRINTING PLATES; MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; PHOTOEMISSION; SECONDARY ION MASS SPECTROMETRY; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

X-RAY PHOTOEMISSION;

GALLIUM NITRIDE;

EID: 0037415929     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1543233     Document Type: Article

References (19)

1. P. J. Hartlieb, A. Roskowski, R. F. Davis, and R. J. Nemanich, J. Appl. Phys. 91, 9151 (2002).
2. J. T. Trexler, S. J. Pearton, P. H. Howlloway, M. G. Mier, K. R. Evans, and R. F. Karlicek, Mater. Res. Soc. Symp. Proc. 449, 1091 (1997).
3. L. Zhou, W. Lanford, A. T. Ping, I. Adesida, J. W. Yang, and A. Khan, Appl. Phys. Lett. 76, 3451 (2000).
4. J.-S. Jang, S.-J. Park, and T.-Y. Seong, Appl. Phys. Lett. 76, 2898 (2000).
5. C.-F. Chu, C. C. Yu, Y. K. Wang, J. Y. Tsai, F. I. Lai, and S. C. Wang, Appl. Phys. Lett. 77, 3423 (2000).
6. C.-S. Lee, Y.-J. Lin, and C.-T. Lee, Appl. Phys. Lett. 79, 3815 (2001).
7. T. Maeda, Y. Koide, and M. Murakami, Appl. Phys. Lett. 75, 4145 (1999).
8. L.-C. Chen, J.-K. Ho, C.-S. Jong, C. C. Chiu, K.-K. Shih, F.-R. Chen, J.-J. Kai, and L. Chang, Appl. Phys. Lett. 76, 3703 (2000).
9. X. A. Cao, S. J. Pearton, G. Dang, A. P. Zhang, F. Ren, and J. M. Van Hove. Appl. Phys. Lett. 75, 4130 (1999).
10. J. K. Kim, C. C. Kim, T. S. Cho, J. H. Je, J. S. Kwak, Y. J. Park, and J.-L. Lee, J. Electron. Mater. 30. 170 (2001).
11. J.-S. Jang, S.-J. Park, and T.-Y. Seong, J. Vac. Sci. Technol. B 17, 2667 (1999).
12. J. Sun, K. A. Rickert, J. M. Redwing, A. B. Ellis, F. J. Himpsel, and T. F. Kuech, Appl. Phys. Lett. 76. 415 (2000).
13. J. K. Kim, K.-J. Kim, B. S. Kim, J. N. Kim, J. S. Kwak, and Y.-L. Lee, J. Electron. Mater. 30, 129 (2001).
14. V. M. Bermudez. D. D. Koleske, and A. E. Wickenden, Appl. Surf. Sci. 126. 69 (1998).
15. W. Kim, A. Salvador, A. E. Botchkarev, O. Aktas, S. N. Mohammad, and H. Morkoc, Appl. Phys. Lett. 69. 559 (1996).
16. J. M. Myoung, K. H. Shim, C. Kim. O. Gluschenkov, K. Kim, S. Kim, D. A. Turnbull, and S. G. Bishop, Appl. Phys. Lett. 69, 2722 (1996).
17. H. Tang and J. B. Webb. Appl. Phys. Lett. 74, 2373 (1999).
18. W. Lu, J. Yang, M. Asif Khan, and I. Adesida, IEEE Trans. Electron Devices 48. 581 (2001).
19. M. Micovic. N. X. Nguyen, P. Janke, W. S. Wong, P. Hashimoto, L. M. McCray, and C. Nguyen, Electron. Lett. 36, 358 (2000).