Cu-doped indium oxide/Ag ohmic contacts for high-power flip-chip light-emitting diodes

Applied Physics Letters

Volumn 86, Issue 6, 2005, Pages 1-3

  Song, June O ^a   Kwak, Joon Seop ^b   Seong, Tae Yeon ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; FERMI LEVEL; FLIP CHIP DEVICES; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; LIGHT REFLECTION; SILVER; WATER; X RAY PHOTOELECTRON SPECTROSCOPY;

DEIONIZED WATER; FLIP-CHIP LIGHT-EMITTING DIODES (FCLED); FORWARD-BIAS VOLTAGES; LIGHT EXTRACTION;

OHMIC CONTACTS;

EID: 21044439850     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1861494     Document Type: Article

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