Low-resistivity and transparent indium-oxide-doped ZnO ohmic contact to p -type GaN

Applied Physics Letters

Volumn 85, Issue 25, 2004, Pages 6191-6193

  Lim, Jae Hong ^a   Hwang, Dae Kue ^a   Kim, Hyun Sik ^a   Oh, Jin Yong ^a   Yang, Jin Ho ^a   Navamathavan, R ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON BEAMS; HIGH TEMPERATURE EFFECTS; LIGHT EMITTING DIODES; LIGHT TRANSMISSION; POLARIZATION; SEMICONDUCTOR MATERIALS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CIRCULAR TRANSMISSION LINE METHOD (C-TLM) PATTERNS; E-BEAM EVAPORATIONS; INDIUM TIN OXIDE (ITO) FILMS; INDIUM-OXIDE-DOPED ZNO (IZO);

GALLIUM NITRIDE;

EID: 20444439557     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1826231     Document Type: Article

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