High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN

Applied Physics Letters

Volumn 83, Issue 12, 2003, Pages 2372-2374

  Song, June O ^a   Leem, Dong Seok ^a   Kwak, Joon Seop ^b   Nam, O H ^b   Park, Y ^b   Seong, Tae Yeon ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GALLIUM NITRIDE; RHODIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

CIRCULAR TRANSMISSION LINE MODEL (CTLM);

OHMIC CONTACTS;

EID: 0142058440     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1613991     Document Type: Article

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