Abnormal dependence of contact resistivity on hole concentration in nonalloyed ohmic contacts to p-GaN

Applied Physics Letters

Volumn 80, Issue 19, 2002, Pages 3554-3556

  Kwak, Joon Seop ^a   Nam, Ok Hyun ^a   Park, Yongjo ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTIVITIES; CURRENT FLOWS; DEEP-LEVEL DEFECTS; MG CONCENTRATIONS; NONALLOYED OHMIC CONTACT; PD CONTACTS;

CONCENTRATION (PROCESS); ELECTRIC ARCS; GALLIUM NITRIDE; OHMIC CONTACTS;

HOLE CONCENTRATION;

EID: 79956027284     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1478154     Document Type: Article

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