Low resistance and transparent Ni-La solid solution/Au ohmic contacts to p-type GaN

Applied Physics Letters

Volumn 84, Issue 9, 2004, Pages 1504-1506

  Song, June O ^a   Leem, Dong Seok ^a   Kwak, J S ^b   Lee, S N ^b   Nam, O H ^b   Park, Y ^b   Seong, Tae Yeon ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; CURRENT VOLTAGE CHARACTERISTICS; DIFFRACTOMETERS; ELECTRIC RESISTANCE; FERMI LEVEL; GALLIUM NITRIDE; LIGHT EMITTING DIODES; LITHOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; SEMICONDUCTING GALLIUM COMPOUNDS; SPUTTERING; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

CIRCULAR TRANSFER LENGTH METHOD (CLTM); LIGHT TRANSMITTANCE;

OHMIC CONTACTS;

EID: 1642588405     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1652238     Document Type: Article

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