Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer

Applied Physics Letters

Volumn 79, Issue 16, 2001, Pages 2588-2590

  Kumakura, Kazuhide ^a   Makimoto, Toshiki ^a   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035886085     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1410336     Document Type: Article

References (18)

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