Ohmic contact formation mechanism of nonalloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopy

Applied Physics Letters

Volumn 74, Issue 16, 1999, Pages 2289-2291

  Lee, Jong Lam ^c   Weber, Marc ^a,c   Kim, Jong Kyu ^c   Lee, Jae Won ^b,c   Park, Yong Jo ^b,c   Kim, Taeil ^b,c   Lynn, Kelvin ^a,c  

^a WASHINGTON STATE UNIVERSITY   (United States)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; FERMI LEVEL; NANOSTRUCTURED MATERIALS; OHMIC CONTACTS; PALLADIUM ALLOYS; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPIC ANALYSIS; SURFACE TREATMENT;

POSITRON ANNIHILATION SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032607402     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123827     Document Type: Article

References (7)

1. T. Mori, T. Kozawa, T. Ohwaki, Y. Yaga, S. Nagai, S. Yamasaki, S. Asami, N. Shibata, and M. Koike, Appl. Phys. Lett. 69, 3537 (1996).
2. J. T. Trexler, S. J. Pearton, P. H. Holloway, M. G. Mier, K. R. Evans, and R. F. Karlicek, Mater. Res. Soc. Symp. Proc. 449, 1091 (1997).
3. H. Ishikawa, S. Kobayashi, Y. Koide, S. Yamasaki, S. Nagai, M. Koike, and M. Murakami, J. Appl. Phys. 81, 1314 (1997).
4. J.-L. Lee, L. Wei, S. Tanigawa, H. Oigawa, and Y. Nannichi, Appl. Phys. Lett. 58, 1167 (1991).
5. W. E. Spicer, Z. L. Weber, N. Newman, T. Kendelewieg, R. Cao, C. McCant, P. Mahowald, K. Miyano, and I. Lindau, J. Vac. Sci. Technol. B 6, 1245 (1988).
6. P. J. Schultz and K. G. Lynn, Rev. Mod. Phys. 60, 701 (1988).
7. J. P. Peng, K. G. Lynn, M. T. Umlor, D. J. Keeble, and D. R. Harsshman, Phys. Rev. B 50, 11247 (1994).