Application of modified transmission line model to measure p -type GaN contact

Applied Physics Letters

Volumn 85, Issue 25, 2004, Pages 6086-6088

  Chen, N C ^a   Tseng, C Y ^a   Chiu, A P ^a   Shih, C F ^a   Chang, P H ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRODES; GALLIUM NITRIDE; HALL EFFECT; LIGHT EMITTING DIODES; OHMIC CONTACTS;

MODIFIED TRANSMISSION LINE MODEL (MTLM); NON-OHMIC CONTACTS; SHEET RESISTANCE; VOLTAGE DROP;

ELECTRIC LINES;

EID: 20444460332     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1835993     Document Type: Article

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