Highly transparent AgSn O2 ohmic contact to p -type GaN for ultraviolet light-emitting diodes

Applied Physics Letters

Volumn 85, Issue 26, 2004, Pages 6374-6376

  Song, June O ^a   Seong, Tae Yeon ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC POTENTIAL; LIGHT EMITTING DIODES; LIGHT TRANSMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SCANNING ELECTRON MICROSCOPY; SILVER COMPOUNDS; TIN COMPOUNDS; ULTRAVIOLET DEVICES;

CONTACT RESISTANCE; FORWARD-BIAS VOLTAGES; ULTRAVIOLET LIGHT EMITTING DIODES; X-RAY PHOTOEMISSION SPECTROSCOPY;

OHMIC CONTACTS;

EID: 13444251212     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1834990     Document Type: Article

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