SCOPUS 정보 검색 플랫폼

Volumn 85, Issue 7, 2004, Pages 1286-1288

Effects of varying interfacial oxide and high-k layer thicknesses for HfO 2 metal-oxide-semiconductor field effect transistor

(7) Rhee, Se Jong a Kang, Chang Yong a Kang, Chang Seok a Choi, Rino a Choi, Chang Hwan a Akbar, Mohammad S a Lee, Jack C a

a The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB SCATTERING; CRYSTALLIZATION TEMPERATURES; INTERFACIAL VOLTAGES; POSTDEPOSITION ANNEALING (PDA);

CAPACITANCE; DEGRADATION; DIELECTRIC MATERIALS; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; MATHEMATICAL MODELS; MOS CAPACITORS; MOSFET DEVICES; PHASE SHIFT; QUANTUM THEORY; THERMAL EFFECTS; THERMOANALYSIS; THIN FILM CIRCUITS;

HAFNIUM COMPOUNDS;

EID: 4444288779 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1773370 Document Type: Article

Times cited : (28)

References (15)

1
- 0034453464
- L. Kang, K. Onishi, Y. Jeon, B. H. Lee, C. Rang, W.-J. Qi, R. Nieh, S. Gopalan, R. Choi, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet. 2000, 35.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2000 , pp. 35
- Kang, L.¹ Onishi, K.² Jeon, Y.³ Lee, B.H.⁴ Rang, C.⁵ Qi, W.-J.⁶ Nieh, R.⁷ Gopalan, S.⁸ Choi, R.⁹ Lee, J.C.¹⁰

2
- 0034785113
- S. J. Lee, H. F. Luan, C. H. Lee, T. S. Jeon, W. P. Bai, Y. Senzaki, D. Roberts, and D. L. Kwong, VLSI Tech. Dig. 2001, 133.
- VLSI Tech. Dig. , vol.2001 , pp. 133
- Lee, S.J.¹ Luan, H.F.² Lee, C.H.³ Jeon, T.S.⁴ Bai, W.P.⁵ Senzaki, Y.⁶ Roberts, D.⁷ Kwong, D.L.⁸

3
- 4244162737
- B. H. Lee, R. Choi, L. Kang, S. Gopalan, R. Nieh, K. Onishi, Y. Jeon, W.-J. Qi, C. Kang, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet. 2000, 39.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2000 , pp. 39
- Lee, B.H.¹ Choi, R.² Kang, L.³ Gopalan, S.⁴ Nieh, R.⁵ Onishi, K.⁶ Jeon, Y.⁷ Qi, W.-J.⁸ Kang, C.⁹ Lee, J.C.¹⁰

4
- 0034795204
- K. Onishi, L. Kang, R. Choi, E. Dharmarajan, S. Gopalan, Y. J. Jeon, C. S. Rang, B. H. Lee, R. Nieh, and J. C. Lee, VLSI Tech. Dig. 2001, 131.
- VLSI Tech. Dig. , vol.2001 , pp. 131
- Onishi, K.¹ Kang, L.² Choi, R.³ Dharmarajan, E.⁴ Gopalan, S.⁵ Jeon, Y.J.⁶ Rang, C.S.⁷ Lee, B.H.⁸ Nieh, R.⁹ Lee, J.C.¹⁰

5
- 79956056584
- M. R. Visokay, J. J. Chambers, A. L.P. Rotondaro, A. Shanware, and L. Colombo, Appl. Phys. Lett. 80, 3183 (2002).
- (2002) Appl. Phys. Lett. , vol.80 , pp. 3183
- Visokay, M.R.¹ Chambers, J.J.² Rotondaro, A.L.P.³ Shanware, A.⁴ Colombo, L.⁵

6
- 0036045244
- K. Onishi, C. S. Kang, R. Choi, H.-J. Cho, S. Gopalan, R. Nieh, S. Krishnan, and J. C. Lee, VLSI Tech. Dig. 2002, 22.
- VLSI Tech. Dig. , vol.2002 , pp. 22
- Onishi, K.¹ Kang, C.S.² Choi, R.³ Cho, H.-J.⁴ Gopalan, S.⁵ Nieh, R.⁶ Krishnan, S.⁷ Lee, J.C.⁸

7
- 0005471559
- R. Choi, C. S. Kang, B. H. Lee, K. Onishi, R. Nieh; S. Gopalan, E. Dharmarajan, and J. C. Lee, VLSI Tech. Dig. 2001, 15.
- VLSI Tech. Dig. , vol.2001 , pp. 15
- Choi, R.¹ Kang, C.S.² Lee, B.H.³ Onishi, K.⁴ Nieh, R.⁵ Gopalan, S.⁶ Dharmarajan, E.⁷ Lee, J.C.⁸

8
- 0036928983
- M. Koyama, A. Kaneko, T. Ino, M. Koike, Y. Kamata, R. Iijima.Y. Ka mimuta, A. Takashima, M. Suzuki, C. Hongo, S. Inumiya, M. Takayanagi, and A. Nishiyama, Tech. Dig. - Int. Electron Devices Meet. 2002, 849.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2002 , pp. 849
- Koyama, M.¹ Kaneko, A.² Ino, T.³ Koike, M.⁴ Kamata, Y.⁵ Iijima, R.⁶ Khmimuta, Y.⁷ Takashima, A.⁸ Suzuki, M.⁹ Hongo, C.¹⁰ Inumiya, S.¹¹ Takayanagi, M.¹² Nishiyama, A.¹³

9
- 0036863349
- W. J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa, and T. P. Ma, IEEE Electron Device Lett. 23, 649 (2002).
- (2002) IEEE Electron Device Lett. , vol.23 , pp. 649
- Zhu, W.J.¹ Tamagawa, T.² Gibson, M.³ Furukawa, T.⁴ Ma, T.P.⁵

10
- 0036804802
- A. L. P. Rotondaro, M. R. Visokay, A. Shanware, J. J. Chambers, and L. Colomboin, IEEE Electron Device Lett. 23, 603 (2002).
- (2002) IEEE Electron Device Lett. , vol.23 , pp. 603
- Rotondaro, A.L.P.¹ Visokay, M.R.² Shanware, A.³ Chambers, J.J.⁴ Colomboin, L.⁵

11
- 0035504954
- M. V. Fischetti, D. A. Neumayer, and E. A. Cartier, J. Appl. Phys. 90, 4587 (2001).
- (2001) J. Appl. Phys. , vol.90 , pp. 4587
- Fischetti, M.V.¹ Neumayer, D.A.² Cartier, E.A.³

12
- 4444275917
- K. Torii, Y. Shiraamoto, S. Saito, O. Tonomura, M. Hiratani, Y. Manabe, M. Caymax, J. W. Maes, VLSI Tech. Dig. 2002, 188.
- VLSI Tech. Dig. , vol.2002 , pp. 188
- Torii, K.¹ Shiraamoto, Y.² Saito, S.³ Tonomura, O.⁴ Hiratani, M.⁵ Manabe, Y.⁶ Caymax, M.⁷ Maes, J.W.⁸

13
- 4444343009
- D. Esseni and A. Abramo, IEEE Trans. Electron Devices 50 (2003).
- (2003) IEEE Trans. Electron Devices , vol.50
- Esseni, D.¹ Abramo, A.²

14
- 0034795707
- I. Polishchuk and C. Hu, VLSI Tech. Dig. 2001, 51.
- VLSI Tech. Dig. , vol.2001 , pp. 51
- Polishchuk, I.¹ Hu, C.²

15
- 0030288532
- J. R. Hauser, IEEE Trans. Electron Devices 43, 1981 (1996).
- (1996) IEEE Trans. Electron Devices , vol.43 , pp. 1981
- Hauser, J.R.¹

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