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Volumn 80, Issue SUPPL., 2005, Pages 11-14
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Influence of TiN metal gate on Si/SiO2 surface roughness in N and PMOSFETs
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Author keywords
Mobility; Surface roughness scattering; TiN metal gate
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CRYOGENICS;
ELECTRIC FIELD EFFECTS;
ELECTRON MOBILITY;
MOSFET DEVICES;
NITROGEN;
SILICA;
SURFACE ROUGHNESS;
TITANIUM NITRIDE;
CHANNEL MOBILITY;
MOBILITY;
SURFACE ROUGHNESS SCATTERING;
TIN METAL GATE;
GATES (TRANSISTOR);
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EID: 19944418513
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2005.04.037 Document Type: Conference Paper |
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Times cited : (8)
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References (11)
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