The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs

Solid-State Electronics

Volumn 48, Issue 8, 2004, Pages 1337-1346

  Watling, J R ^a   Yang, L ^a   Borici M ^a   Wilkins, R C W ^a   Asenov, A ^a   Barker, J R ^a   Roy, S ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Degeneracy; Interface roughness scattering; MOSFETs; Strained Si

Indexed keywords

BAND STRUCTURE; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC FIELDS; EXTRAPOLATION; GROWTH KINETICS; HETEROJUNCTIONS; MATHEMATICAL MODELS; MONTE CARLO METHODS; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; STRAIN; SURFACE ROUGHNESS;

DEGENERACY; INTERFACE ROUGHNESS SCATTERING; STRAINED SI; TENSILE STRAIN;

MOSFET DEVICES;

EID: 2342561168     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.01.015     Document Type: Article

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