Improved theory for remote-charge-scattering-limited mobility in metal-oxide-semiconductor transistors

Applied Physics Letters

Volumn 81, Issue 13, 2002, Pages 2391-2393

  Saito, Shin Ichi ^a   Torii, Kazuyoshi ^a   Hiratani, Masahiko ^a   Onai, Takahiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL EXPRESSIONS; GATE OXIDE; IMAGE CHARGES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; MOBILITY DEGRADATION; POLYCRYSTALLINE SILICON GATES; QUANTIZATION EFFECTS; SCATTERING POTENTIALS; TRANSPORT THEORY; VERTICAL ELECTRIC FIELDS;

DIELECTRIC DEVICES; ELECTRIC FIELDS; ELECTRON MOBILITY; MOSFET DEVICES; POLYSILICON; SCATTERING; STATISTICAL MECHANICS;

TRANSISTORS;

EID: 79956020750     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1510178     Document Type: Article

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