Scaling MOSFETs to the Limit: A Physicists's Perspective

Journal of Computational Electronics

Volumn 2, Issue 2-4, 2003, Pages 73-79

  Fischetti, M V ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Coulomb interactions; high insulators; scaling; strained Si; surface roughness

Indexed keywords

COULOMB INTERACTIONS; LEAKAGE CURRENTS; SURFACE PLASMONS; SURFACE ROUGHNESS;

CRYSTAL DIRECTION; DEVICE DESIGN; LONG-RANGE COULOMB INTERACTION; MOSFET SCALING; POOR PERFORMANCE; SCALING; STRAINED-SI; TRANSPORT PHYSICS;

MOSFET DEVICES;

EID: 33044486909     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/B:JCEL.0000011402.54036.32     Document Type: Article

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