Evaluation of strain-induced mobility variation in TiN metal gate SOI n-MOSFETs

ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

Volumn , Issue , 2004, Pages 393-396

  Guillaume, T ^a   Mouis, M ^a   Maitrejean S ^b   Poncet, A ^c   Vinet, M ^b   Deleonibus, S ^b  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

^c INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; ETCHING; FINITE ELEMENT METHOD; GATES (TRANSISTOR); MOSFET DEVICES; RESIDUAL STRESSES; SEMICONDUCTING FILMS; SILICA; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; TENSORS; TITANIUM NITRIDE;

GATE LENGTH; MECHANICAL STRESS; METALLIC GATES; PARASITIC EFFECTS;

ELECTRON MOBILITY;

EID: 17644418438     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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