Accurate investigation of the high-k soft phonon scattering mechanism in metal gate MOSFETs

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 379-382

  Weber, O ^a,b   Casse M ^a   Thevenod, L ^a   Ducroquet, F ^a,c   Ernst, T ^a   Guillaumot, B ^a,d   Deleonibus, S ^a  

^a CEA LETI   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c IMEP LAHC   (France)

^d STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOCIATION; ELECTROMAGNETIC WAVE SCATTERING; ELECTRON MOBILITY; GATES (TRANSISTOR); MOSFET DEVICES; SILICA;

COULOMB SCATTERING; INTERFACIAL LAYER (IL); METAL GATE STACKS; SOFT PHONON SCATTERING; TEMPERATURE DEPENDENCE;

PHONONS;

EID: 33645746962     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546664     Document Type: Conference Paper

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