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Volumn E88-C, Issue 6, 2005, Pages 1098-1113

High-frequency circuit design oriented compact bipolar transistor modeling with HICUM

Author keywords

Bipolar transistors; Compact modeling; HICUM

Indexed keywords

ELECTRIC NETWORK ANALYSIS; HIERARCHICAL SYSTEMS; INTEGRATED CIRCUITS; MATHEMATICAL MODELS;

EID: 25844521186     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e88-c.6.1098     Document Type: Review
Times cited : (34)

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    • Monterey, CA
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    • (2002) IEEE BCTM , pp. 116-119
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    • An improved method for determining the transit time of Si/SiGe bipolar transistors
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    • (2003) Proc. BCTM , pp. 229-232
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    • San Diego, CA, Sept.
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    • (2003) Power Amplifier Workshop
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    • Monterey, CA
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    • (2002) IEEE BCTM , pp. 112-115
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    • (2004) Proc. MIXDES , pp. 416-419
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    • Compact bipolar transistor modeling-issues and possible solutions
    • invited paper at San Francisco, CA
    • M. Schroter, "Compact bipolar transistor modeling-Issues and possible solutions," invited paper at WCM, Proc. International NanoTech Meeting, pp.282-285, San Francisco, CA, 2003.
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    • See: www.tiburon-da.com


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.