An improved method for determining the transit time of Si/SiGe bipolar transistors

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2003, Pages 229-232

  Malorny, M ^a   Schroter, M ^a   Celi, D ^b   Berger, D ^b  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; TRANSCONDUCTANCE;

BASE-EMITTER; EXTERNAL COLLECTOR SERIES RESISTANCE; INTERNAL VOLTAGES; THERMAL VOLTAGE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1042266044     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/bipol.2003.1274972     Document Type: Conference Paper

References (5)

1. T of bipolar transistors", Solid-State Electronics, Vol. 26, 1983, pp. 75-82 and pp. 929.
2. M. Schroter and T.-Y. Lee, "A physics-based minority charge and transit time model for bipolar transistors", IEEE Trans. Electron Dev., vol. 46, pp. 288-300, 1999.
3. B.C. Bouma and A.C. Roelofs, "An Experimental Determination of the Forward-Biased Emitter-Base Capacitance", Solid-State Electron., Vol. 21, 1978, pp. 833-836.
4. M. Schroter, "HICUM, a Scalable Physics-based Compact Bipolar Transistor Model", http://www.iee.et.tu-dresden.de/iee/eb, December 2001.
5. H. Baudry et al., "High Performance 0.25μm SiGe and SiGe:C HBTs Using Non Selective Epitaxy", BCTM 2001, pp. 52-55.