Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s

IEEE Journal of Solid-State Circuits

Volumn 31, Issue 8, 1996, Pages 1076-1090

  Rein, H M ^a,b,c,d   Moller M ^b  

^a IEEE

^b RUHR UNIVERSITY BOCHUM   (Germany)

^c UNIVERSITY OF STUTTGART   (Germany)

^d AEG   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND AMPLIFIERS; DIGITAL INTEGRATED CIRCUITS; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

HIGH SPEED CIRCUITS; SILICON BIPOLAR CIRCUITS;

BIPOLAR INTEGRATED CIRCUITS;

EID: 0030213937     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.508255     Document Type: Article

References (45)

1. H.-M. Rein, "Design aspects of 10 to 40 Gb/s digital analog Si-bipolar IC's," in Proc. Symp. on VLSI Circuits (invited paper), Kyoto, June 1995. pp. 49-54.
2. _, "Very-high-speed Si and SiGe bipolar IC's," in Proc. ESS-DERC'95, The Hague, The Netherlands, Sept. 1995, pp. 45-56.
3. A. Felder, M. Möller, J. Popp, J. Böck, and H.-M. Rein, "46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider inn silicon bipolar technology," IEEE J. Solid-State Circuits, vol. 31, no. 4, Apr. 1996, pp. 481-486.
4. M. Möller, H.-M. Rein, A. Felder, J. Popp, and J. Böck, "50 Gb/s time-division multiplexer in Si-bipolar technology," Electron. Lett., vol. 31, pp. 1431-1433, Aug. 1995.
5. H.-M. Rein, J. Hauenschild, M. Möller, W. McFarland, D. Pettengill, and J. Doernberg, "30 Gbit/s Si multiplexer and demultiplexer IC's in silicon bipolar technologies," Electron. Lett., vol. 28, no. 1, pp. 97-99, Jan. 1992.
6. J. Hauenschild, A. Felder, M. Kerber, H.-M. Rein, and L. Schmidt, "A 22 Gb/s decision circuit and a 32 Gb/s regenerating demultiplexer IC fabricated in silicon bipolar technology," in Proc. IEEE 1992 BCTM, Minneapolis, Oct. 1992, pp. 151-154.
7. A. Felder, J. Hauenschild, M. Kerber, and H.-M. Rein, "Static silicon frequency divider for low power consumption (4 mW, 10 GHz) and high speed (160 mW, 19 GHz)," in Proc. IEEE 1992 BCTM, Minneapolis, Oct. 1992, pp. 159-162.
8. H.-M. Rein, R. Schmid, P. Weger, T. Smith, T. Herzog, and R. Lachner, "A versatile Si-bipolar driver circuit with high output voltage swing for external and direct modulation of laser diodes in 10 Gb/s optical fiber links," IEEE J. Solid-State Circuits, vol. 29, pp. 1014-1021, Sept. 1994.
9. M. Neuhäuser, H.-M. Rein, H. Wernz, and A. Felder, "A 13 Gbit/s Si bipolar preamplifier for optical front ends," Electron. Lett., vol. 29, no. 5, pp. 492-493, Mar. 1993.
10. M. Möller, H.-M. Rein, and H. Wernz, "13 Gb/s Si-bipolar AGC amplifier with high gain and wide dynamic range for optical-fiber receivers," IEEE J. Solid-State Circuits, vol. 29, no. 7, pp. 815-822, July 1994.
11. _, "15 Gb/s high-gain limiting amplifier fabricated in a Si-bipolar production technology," Electron. Lett., vol. 30, no. 18, pp. 1519-1520, Sept. 1994.
12. A. Felder, R. Stengl, J. Hauenschild, H.-M. Rein, and T. F. Meister, "25 to 40 Gb/s IC's in a 0.8 μm silicon selective epitaxy bipolar technology," in Dig. 1993 IEEE ISSCC, San Francisco, pp. 156-157, 281, Feb. 1993.
13. H. Klose et al., "B6HF: A 0.8 micron 25 GHz/25 ps bipolar technology for 'mobile radio' and 'ultra fast data link' IC-products," in Proc. IEEE 1993 BCTM, Minneapolis, Oct. 1993, pp. 125-127.
14. J. Böck et al., "A 0.6 μm Si bipolar technology with 17 ps CML gate delay and 30 GHz static frequency divider," in Proc. ESSDERC'95, The Hague, The Netherlands, Sept. 1995, pp. 418-420.
15. T. F. Meister et al., "Sub-20 ps silicon bipolar technology using selective epitaxial growth," in Dig. IEEE IEDM 1992, San Francisco, pp. 401-404, Dec. 1992.
16. rnax up to 120 GHz," in Dig. IEEE IEDM 1994, San Francisco, Dec. 1994, pp. 377-380.
17. J. Hauenschild and H.-M. Rein, "Influence of transmission-line inter-connections between Gbit/s IC's on time jitter and instabilities," IEEE J. Solid-State Circuits, vol. 25, no. 3, pp. 763-766, June 1990.
18. J. Hauenschild, "Optimization of signal transmission between integrated silicon-bipolar circuits in the Gbit/s range," Dr.-Ing. thesis (in German), Ruhr-University Bochum, Fakultät für Elektrotechnik, Bochum, Germany, 1993.
19. E. M. Cherry and D. E. Hooper, "The design of wide-band transistor feedback amplifier," in Inst. Elec. Eng. Proc., Feb. 1963, vol. 110, no. 2, pp. 375-389.
20. M. Neuhäuser, M. Möller, H.-M. Rein, and H. Wernz, "Low-noise, high transimpedance Si-bipolar AGC amplifier for 10 Gb/s optical-fiber links," IEEE Photonics Technol. Lett., vol. 7, no. 5, pp. 549-551, May 1995.
21. M. Neuhäuser, H.-M. Rein, and H. Wernz, "Low-noise, high-gain Si-bipolar preamplifiers for 10 Gb/s optical-fiber links - Design and realization," IEEE J. Solid-State Circuits, vol. 31, pp. 24-29, Jan. 1996.
22. "Photonik II. Joint research program supported by the German Ministry of Research and Technology (BMBF)".
23. M. Ishihara, O. Nakajima, H. Ichino, and Y. Yanauchi, "9 GHz bandwidth, 8-20 dB controllable-gain monolithic amplifier using AlGaAs/GaAs HBT technology," Electron. Lett., pp. 1317-1318, Sept. 1989.
24. J. L. Hullett, H. B. Doan, and G. Rosman, "A modified receiver for optical transmission systems," IEEE Trans. Commun., pp. 1514-1518, Dec. 1975.
25. R. Ranfft and H.-M. Rein, "High-speed bipolar logic circuits with low power consumption for LSI - A comparison," IEEE J. Solid-State Circuits, vol. 17, no. 4, pp. 703-712, Aug. 1982.
26. T ) falloff at high current densities," IEEE Trans. Electron Devices, vol. 9, pp. 164-174, Mar. 1962.
27. H. Stübing, H.-M. Rein (part I) and respectively, H.-M. Rein, M. Schröter (part II), "A compact physical large-signal model for high-speed bipolar transistors at high current densities, part I: One-dimensional model, part II: Two-dimensional model and experimental results," IEEE Trans. Electron Devices, vol. 34, no. 8, pp. 1741-1761, Aug. 1989.
28. M. Schröter and H.-M. Rein, "Transit time of high-speed bipolar transistors in dependence on operating point, technological parameters and temperature," in Proc. IEEE 1989 BCTM, Minneapolis, Sept. 1989, pp. 250-253.
29. D. J. Walkey, M. Schröter, and S. Voinigescu, "Predictive modeling of lateral scaling in bipolar transistors," in Proc. IEEE 1995 BCTM, Minneapolis, Oct. 1995, pp. 74-77.
30. N. Itoh, Y. Yoshida, S. Watanabe, Y. Katsumata, and H. Iwai, "The analysis of silicon bipolar transistor scaling-down scheme for low noise and low power analog application," in Proc. IEEE 1994 BCTM, Minneapolis, Oct. 1994, pp. 60-63.
31. M. Schröter and H.-M. Rein, "Investigation of very fast and high-current transients in digital bipolar IC's using both a new compact model and a device simulator," IEEE J. Solid-State Circuits, vol. 30, no. 5, pp. 551-562, May 1995.
32. M. Schröter, "A survey of present compact models for high-speed bipolar transistors," Frequenz, vol. 47, pp. 178-190, July/Aug. 1993.
33. H.-M. Rein and M. Schröter, "TRADICA - A computer program for dimensioning and calculating high-speed integrated transistors," Ruhr-University Bochum, Germany, 4.1 Edition, User's Manual, 1993.
34. M. Schröter, "Physical models for high-speed silicon bipolar transistors - A comparing survey," Ruhr-University Bochum, Fakultät für Elektrotechnik, Bochum, Germany, Habilitation (in German), 1993.
35. A. Koldehoff, M. Schröter, and H.-M. Rein, "A compact bipolar transistor model for very-high-frequency applications with special regard to narrow emitter stripes and high current densities," Solid-State Electron., vol. 36, no. 7, pp. 1035-1048, July 1993.
36. M. Pfost, H.-M. Rein, and T. Holzwarth, "Modeling of the substrate effect in high-speed Si-bipolar IC's," in Proc. IEEE 1995 BCTM, Minneapolis, Oct. 1995, pp. 182-185.
37. H.-M. Rein, T. Schad, and R. Zühlke, "The influence of the base resistance and the carrier avalanche effect on the output characteristics of planar transistors," Solid-State Electron., vol. 15, pp. 481-500, 1972.
38. H.-M. Rein, "Calculation of the breakdown characteristics of bipolar transistors using a two-dimensioned model," Solid-State Electron., vol. 19, pp. 145-147, 1976.
39. E. Zanoni et al., "A physics-based, accurate SPICE model of impactionization effects in bipolar transistors," in Proc. ESSDERC'94, Edinburgh, Sept. 1994, pp. 181-184.
40. R. Reimann and H.-M. Rein, "A single-chip bipolar AGC amplifier with large dynamic range for optical-fiber receivers operating up to 3 Gbit/s," IEEE J. Solid-State Circuits, vol. 24, no. 6, pp. 1744-1748, Dec. 1989.
41. H. Meinke and F. W. Gundlach, Taschenbuch der Hochfrequenztechnik. Berlin: Springer, 1986.
42. V. dela Torre et al., "MOSAIC V - A very high performance bipolar technology," in Proc. IEEE 1991 BCTM, Minneapolis, Sept. 1991, pp. 21-24.
43. M. Bussmann, U. Langmann, W. J. Hillary, and W. W. Brown, "PRBS generation and error detection above 10 Gb/s using a monolithic Si bipolar IC," IEEE J. Lightwave Technol., vol. 12, no. 2, pp. 353-359, Feb. 1994.
44. J. Te Winkel, "Extended charge-control model for bipolar transistors," IEEE Trans. Electron Devices, vol. ED-20, pp. 389-394, Apr. 1973.
45. M. Pfost, H.-M. Rein, and T. Holzwarth, "Modeling substrate effects in the design of high-speed Si-bipolar IC's," to be published, IEEE J. Solid-State Circuits, vol. 31, 1996.