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Volumn 31, Issue 10, 1996, Pages 1476-1482

VBIC95, the vertical bipolar inter-company model

(13)  McAndrew, Colin C a,b,i,k,o,p   Seitchik, Jerold A a,c,i,q,r,s   Bowers, Derek F a,d,t,u,v,w,x,y   Dunn, Mark e,z,aa,ab,ac   Foisy, Mark a,f   Getreu, Ian a,g   McSwain, Marc h,ad,ae,af,ag,ah,ai   Moinian, Shahriar a,i,af,aj   Parker, James j   Roulston, David J a,k   Schröter, Michael a,l   Van Wijnen, Paul m   Wagner, Lawrence F a,n  


Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; EQUIVALENT CIRCUITS; MATHEMATICAL MODELS; OXIDES; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES;

EID: 0030270762     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.540058     Document Type: Article
Times cited : (204)

References (11)
  • 2
    • 0014780722 scopus 로고
    • An integrated charge control model of bipolar transistors
    • May
    • H. K. Gummel and H. C. Poon, "An integrated charge control model of bipolar transistors," Bell Syst. Tech. J., vol. 49, pp. 827-852, May 1970.
    • (1970) Bell Syst. Tech. J. , vol.49 , pp. 827-852
    • Gummel, H.K.1    Poon, H.C.2
  • 3
    • 0019268407 scopus 로고    scopus 로고
    • A bipolar transistor model of quasisaturation for use in computer-aided design (CAD)
    • L. J. Turgeon and J. R. Mathews, "A bipolar transistor model of quasisaturation for use in computer-aided design (CAD)," in Proc. 1980 IEDM, pp. 394-397.
    • Proc. 1980 IEDM , pp. 394-397
    • Turgeon, L.J.1    Mathews, J.R.2
  • 4
    • 0022083515 scopus 로고
    • A unified circuit model for bipolar transistors including quasi-saturation effects
    • June
    • G. M. Kull, L. W. Nagel, S.-W. Lee, P. Lloyd, E. J. Prendergast, and H. K. Dirks, "A unified circuit model for bipolar transistors including quasi-saturation effects," IEEE Trans. Electron Devices, vol. 32, no. 6, pp. 1103-1113, June 1985.
    • (1985) IEEE Trans. Electron Devices , vol.32 , Issue.6 , pp. 1103-1113
    • Kull, G.M.1    Nagel, L.W.2    Lee, S.-W.3    Lloyd, P.4    Prendergast, E.J.5    Dirks, H.K.6
  • 5
    • 0022152069 scopus 로고
    • New formulation of the current and charge relations in bipolar transistors for modeling for CACD purposes
    • Nov.
    • H. C. de Graaff and W. J. Kloosterman, "New formulation of the current and charge relations in bipolar transistors for modeling for CACD purposes," IEEE Trans. Electron Devices, vol. 32, no. 11, pp. 2415-2419, Nov. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.32 , Issue.11 , pp. 2415-2419
    • De Graaff, H.C.1    Kloosterman, W.J.2
  • 6
    • 0023399799 scopus 로고
    • A compact physical large-signal model for high-speed bipolar transistors at high current densities - Part I: One-dimensional model
    • Aug.
    • H. Stubing and H.-M. Rein, "A compact physical large-signal model for high-speed bipolar transistors at high current densities - Part I: one-dimensional model," IEEE Trans. Electron Devices, vol. 34, no. 8, pp. 1741-1751, Aug. 1987.
    • (1987) IEEE Trans. Electron Devices , vol.34 , Issue.8 , pp. 1741-1751
    • Stubing, H.1    Rein, H.-M.2
  • 7
    • 33746013210 scopus 로고
    • A charge-based large-signal bipolar transistor model for device and circuit simulation
    • Jan.
    • H. Jeong and J. G. Fossum, "A charge-based large-signal bipolar transistor model for device and circuit simulation," IEEE Trans. Electron Devices, vol. 34, no. 1, pp. 124-131, Jan. 1989.
    • (1989) IEEE Trans. Electron Devices , vol.34 , Issue.1 , pp. 124-131
    • Jeong, H.1    Fossum, J.G.2
  • 8
    • 0024889966 scopus 로고    scopus 로고
    • Transit time of high-speed bipolar transistors in dependence on operating point, technological parameters, and temperature
    • M. Schröter and H.-M. Rein, "Transit time of high-speed bipolar transistors in dependence on operating point, technological parameters, and temperature," in Proc. 1989 BCTM, pp. 250-253.
    • Proc. 1989 BCTM , pp. 250-253
    • Schröter, M.1    Rein, H.-M.2
  • 9
    • 0024127898 scopus 로고    scopus 로고
    • Avalanche multiplication in a compact bipolar transistor model for circuit simulation
    • W. J. Kloosterman and H. C. de Graaff, "Avalanche multiplication in a compact bipolar transistor model for circuit simulation," in Proc. 1988 BCTM, pp. 103-106.
    • Proc. 1988 BCTM , pp. 103-106
    • Kloosterman, W.J.1    De Graaff, H.C.2
  • 10
    • 0017935430 scopus 로고
    • Simulation of excess phase in bipolar transistors
    • Feb.
    • P. B. Weil and L. P. McNamee, "Simulation of excess phase in bipolar transistors," IEEE Trans. Circuits Syst., vol. 25, no. 2, pp. 114-116, Feb. 1978.
    • (1978) IEEE Trans. Circuits Syst. , vol.25 , Issue.2 , pp. 114-116
    • Weil, P.B.1    McNamee, L.P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.