Germanium profile design options for SiGe LEC HBTs

Solid-State Electronics

Volumn 48, Issue 7, 2004, Pages 1133-1146

  Schroter, Michael ^a   Tran, Hung ^a   Kraus, Wolfgang ^b  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b Theresienstr 2   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ENERGY GAP; GERMANIUM; PROCESS CONTROL; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

CURRENT GAIN; HIGH FREQUENCY NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1842865590     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.12.004     Document Type: Article

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