Modeling thermal resistance in trench-isolated bipolar technologies including trench heat flow

Solid-State Electronics

Volumn 46, Issue 1, 2002, Pages 7-17

  Walkey, David J ^a   Smy, Tom J ^a   Reimer, Chris ^a   Schröter, Michael ^b   Tran, Hai ^c   David Marchesan, ^c  

^a CARLETON UNIVERSITY   (Canada)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c Quake Technologies Inc   (Canada)

Author keywords

Isolation; Model; Resistance; Thermal; Transistor; Trench

Indexed keywords

COMPUTER SIMULATION; HEAT RESISTANCE; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; THERMAL CONDUCTIVITY;

TRENCH WALLS;

BIPOLAR TRANSISTORS;

EID: 0036132423     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00305-7     Document Type: Article

References (9)

1. Si/SiGe epitaxial-base transistors, parts I and II
2. A 7.7ps CML using selective-epitaxial SiGe HBT's
3. Prediction of thermal resistance in trench-isolated bipolar device structures
4. Extraction and modeling of thermal behavior in trench-isolated bipolar structures
5. A physics-based dynamic impedance model for vertical bipolar transistors on SOI substrates