Physics- and process-based bipolar transistor modeling for integrated circuit design

IEEE Journal of Solid-State Circuits

Volumn 34, Issue 8, 1999, Pages 1136-1149

  Schröter, Michael ^a,b,f,g,h   Rein, Hans Martin ^c,i   Rabe, Winfried ^d,j   Reimann, Reinhard ^d,j   Wassener, Hans Joachim ^d,j   Koldehoff, Andreas ^e  

^a Rockwell Semiconductor Systems   (United States)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c RUHR UNIVERSITY BOCHUM   (Germany)

^d TEMIC Semiconductor GmbH   (Germany)

^e SICAN GmbH   (Germany)

^f NORTEL NETWORKS   (Canada)

^g CARLETON UNIVERSITY   (Canada)

^h UNIVERSITY OF CALIFORNIA   (United States)

ⁱ AEG Telefunken   (Germany)

^j TEMIC Semiconductors   (Germany)

more..

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; IMPEDANCE MATCHING (ELECTRIC); INTEGRATED CIRCUIT LAYOUT; OPTIMIZATION;

CIRCUIT OPTIMIZATION; COMPACT MODELING; GEOMETRY SCALING;

BIPOLAR TRANSISTORS;

EID: 0033169551     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.777111     Document Type: Article

References (45)

1. M. Muraguchi and M. Aikawa, "Microwave components for cellular portable radiotelephone," Solid-State Electron., vol. 38, pp. 1551-1557, 1995.
2. C. D. Hull, J. L. Tham, and R. R. Chu, "A direct-conversion receiver for 900 MHz (ISM band) spread-spectrum digital cordless telephone," IEEE J. Solid-State Circuits, vol. 31, pp. 1955-1963, 1996.
3. H.-M. Rein, "Si and SiGe bipolar IC's for 10-40 Gb/s optical-fiber TDM links," Int. J. High-Speed Electronics and Systems, to be published.
4. T. Suzaki, M. Soda, T. Morikawa, H. Tezuka, C. Ogawa, S. Fujita, H. Takemura, and T. Tashiro, "Si bipolar chip set for 10 Gb/s optical receiver." IEEE J. Solid-State Circuits, vol. 27, pp. 1781-1786. Dec. 1992.
5. H.-M. Rein and M. Möller, "Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s," IEEE J. Solid-State Circuits, vol. 31 , pp. 1076-1090, 1996.
6. C. D. Hull, private communication.
7. ICCAP User's Mannal, Hewlett-Packard/EEsof, 1993.
8. P. Antognetti and G. Massobrio, Semiconductor Device Modeling with SPICE. New York: McGraw-Hill, 1988.
9. M. Schröter, "Bipolar transistor modeling for high-speed circuit design and process development," in Short Course, IEEE Bipolar Circuits and Technology Meeting, Minneapolis, MN, 1996. See also CMC presenta-tion, San Francisco, CA, available: http://www.eiagroup.org/cmc.
10. M. Schröter and H.-M. Rein, "Investigation of very fast and high-current transients in digital bipolar IC's using both a new compact model and a device simulator," IEEE J. Solid-State Circuits, vol. 30, pp. 551-562, 1996.
11. A. Koldehoff, M. Schröter, and H.-M. Rein, "A compact bipolar transistor model for very high-frequency applications with special regard to narrow stripes and high current densities," Solid-State Electron., vol. 36, pp. 1035-1048, 1993.
12. H.-M. Rein, H. Stübing, and M. Schröter, "A compact physical large-signal model for high-speed bipolar transistors at high current densities," IEEE Trans. Electron Devices, vol. 34, pp. 1741-1761, 1987. For the latest version, see M. Schröter and T.-L. Lee, "HICUM - A physics-based scaleable compact bipolar transistor model," presented at the Compact Model Council, San Francisco, CA, Dec. 1998.
13. H.-M. Rein, H. Stübing, and M. Schröter, "A compact physical large-signal model for high-speed bipolar transistors at high current densities," IEEE Trans. Electron Devices, vol. 34, pp. 1741-1761, 1987. For the latest version, see M. Schröter and T.-L. Lee, "HICUM - A physics-based scaleable compact bipolar transistor model," presented at the Compact Model Council, San Francisco, CA, Dec. 1998.
14. W. L. Engl, R. Laur, and H. K. Dirks, "MEDUSA - A simulator for modular circuits," IEEE Trans. Computer-Aided Design, vol. CAD-1, pp. 85-93, 1982.
15. M. Schröter, "Transient and small-signal high-frequency simulation of numerical device models embedded in an external circuit," COMPEL, vol. 10, no. 4, pp. 377-378, 1991.
16. MEDICI User's Manual, Technology Modeling Associates, Sunnyvale, CA, 1996.
17. H. C. deGraaff and W. Kloosterman, "The MEXTRAM bipolar transistor model," Manual, Philips Res. Labs., June 1995.
18. C. C. McAndrew, J. Seitchik, D. Bowers, M. Dunn, M. Foisy, I. Getreu, M. McSwain, S. Moinian, J. Parker, D. Roulston, M. Schröter, P. van Wijnen, and L. Wagner, "VBIC95, the vertical bipolar inter-company model," IEEE J. Solid-State Circuits, vol. 31, pp. 1476-1483, 1996.
19. H.-M. Rein, "A simple method for separation of the internal and external (peripheral) currents of bipolar transistors," Solid-State Electron., vol. 27, pp. 625-632, 1984.
20. M. Schröter and D. J. Walkey, "Physical modeling of lateral scaling in bipolar transistors,"' IEEE J. Solid-State Circuits, vol. 31, pp. 1484-1492. 1996; and vol. 32, p. 171, 1998.
21. M. Schröter and H.-M. Rein, "Transit time of high-speed bipolar transistors in dependence on operating point, technological parameters, and temperature," in Proc. IEEE Bipolar Circuits and Technology Meeting, Minneapolis, MN, 1989, pp. 250-253.
22. S. Voinigescu, M. Maliepaard, J. Showell, G. Babcock, D. Marchesan, M. Schröter, P. Schvan, and D. Harame, "A scaleable high-frequency noise model for bipolar transistors and its application to optimal transistor sizing for low-noise amplifier design." IEEE J. Solid-State Circuits, vol. 32, pp. 1430-1439, 1997.
23. H. K. Gummel and H. C. Poon, "An integral charge-control model for bipolar transistors," Bell Syst. Tech. J., vol. 49, pp. 827-852, 1970.
24. M. Schröter, M. Friedrich, and H.-M. Rein, "A generalized integral charge-control relation and its application to compact models for silicon-based HBT's," IEEE Trans. Electron Devices, vol. 40, pp. 2036-2046, 1993.
25. D. J. Walkey, M. Schröter and S. Voinigescu, "Predictive modeling of lateral scaling in bipolar transistors," in Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, 1995, pp. 74-77.
26. M. Schröter and T. Y. Lee, "A physics-based minority charge and transit time model for bipolar transistor compact modeling," IEEE Trans. Electron Devices, vol. 46, pp. 288-300, 1999.
27. M. Schröter, "Simulation and modeling of the low-frequency base resistance of bipolar transistors in dependence on current and geometry," IEEE Trans. Electron Devices, vol. 38, pp. 538-544, 1991.
28. _. "Modeling of the low-frequency base resistance of single base contact bipolar transistors," IEEE Trans. Electron Devices, vol. 39, pp. 1966-1968, 1992.
29. M. Schröter, Z. Yan, T.-Y Lee, and W. Shi, "A compact tunneling current and collector breakdown model," Proc. IEEE Bipolar Circuits and Technology Meeting, Minneapolis, 1998, pp. 203-206.
30. Y. C. Chen, J. Deen, Z. Yan, and M. Schröter, "Effect of emitter dimensions on low-frequency noise in double-polysilicon BJT's," Electron. Lett., vol. 34, no. 2, pp. 219-220, 1998.
31. M. Pfost, H.-M. Rein, and T. Holzwarth, "Modeling substrate effects in the design of high-speed Si-bipolar IC's," IEEE J. Solid-State Circuits, vol. 32, pp. 1493-1501, 1996.
32. M. Pfost and H.-M. Rein, "Modeling and measurement of substrate coupling in Si-bipolar IC's up to 40 GHz," IEEE J. Solid-State Circuits, vol. 34, pp. 582-591, 1998.
33. R. Dennison and K. Walter, "Local thermal effects in high performance bipolar devices/circuits," in Proc. IEEE Bipolar Circuits and Technology Meeting, Minneapolis, MN, 1989, pp. 164-167.
34. T. Y. Lee and M. Schröter, unpublished.
35. MATLAB, User's Guide to Version 5, 1998.
36. M. Schröter, "Modeling of high-speed bipolar transistors for predictive circuit design and optimization," Natural Sciences and Engineering Research Council of Canada, Project Rep. 1996, to be published.
37. TRADICA, Manual Version 4.4, June 1996.
38. J. Macedo, private communication.
39. H.-M. Rein and M. Schröter, "Experimental determination of the internal base sheet resistance of bipolar transistors under forward-bias conditions," Solid-State Electron., vol. 34, pp. 301-308, 1991.
40. H. Q. Tran, M. Schröter, D. J. Walkey, D. Marchesan, and T. J. Smy, "Simultaneous extraction of thermal and emitter series resistances in bipolar transistors," in Proc. IEEE Bipolar Circuits and Technology Meeting, Minneapolis, MN, 1997, pp. 170-173.
41. B. C. Bouma and A. C. Roelofs, "An experimental determination of the forward-biased emitter-base capacitance," Solid-Stale Electron., vol. 21, pp. 833-836, 1978.
42. T of bipolar transistors," Solid-State Electronics, vol. 26, pp. 75-83 and p. 929, 1983.
43. T. Kleinpenning, "Low frequency noise in polysilicon bipolar transistors," IEEE Trans. Electron Devices, vol. 42, pp. 720-727, 1995.
44. A. Felder, J. Hauenschild, M. Kerber, and H.-M. Rein, "Static silicon frequency divider for low power consumption (4 mW, 10 GHz) and high speed (100 mW, 19 GHz), in Pwc. IEEE Bipolar Circuits and Technology Meeting, Minneapolis, MN, 1992, pp. 159-162.
45. R. Götzfried, F. Beisswanger, and S. Gerlach, "Design of RF integrated circuits using SiGe bipolar technology," IEEE J. Solid-State Circuits, vol. 34, pp. 1417-1422, 1998.