SiGe HBT and BiCMOS technologies for optical transmission and wireless communication systems

IEEE Transactions on Electron Devices

Volumn 50, Issue 3, 2003, Pages 656-668

  Washio, Katsuyoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

BiCMOS integrated circuits; Bipolar transistors; Emitter coupled logic; Epitaxial growth; Heterojunctions; High speed integrated circuits; Millimeter wave bipolar integrated circuits; MIMICs; Monolithic microwave integrated circuits (MMICs); Optical communication

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; LIGHT TRANSMISSION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTICAL COMMUNICATION; OPTICAL DEVICES; OPTICAL FIBERS; OPTICAL LINKS; Q FACTOR MEASUREMENT; SEMICONDUCTING SILICON COMPOUNDS; WIRELESS TELECOMMUNICATION SYSTEMS;

CUT OFF FREQUENCY; EMITTER COUPLED LOGIC; HIGH Q VARACTOR; MILLIMETER WAVE BIPOLAR INTEGRATED CIRCUITS; OSCILLATION FREQUENCY; SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR; TRANSCEIVER LARGE SCALE INTEGRATED CIRCUITS;

CMOS INTEGRATED CIRCUITS;

EID: 0038236470     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.810484     Document Type: Article

References (25)

1. T self-aligned selective epitaxial SiGe HBT with SMI electrodes," in IEEE ISSCC Dig. Tech. Papers, 1998, pp. 312-313.
2. T. Masuda, K. Ohhata, E. Ohue, K. Oda, M. Tanabe, H. Shimamoto, T. Onai, and K. Washio, "40 Gb/s analog IC chipset for optical receiver using SiGe HBTs," in IEEE ISSCC Dig. Tech. Papers, 1998, pp. 314-315.
3. S. Subbanna, D. Ahlgren, D. Harame, and B. Meyerson, "How SiGe evolved into a manufacturable semiconductor production process," in IEEE ISSCC Dig. Tech. Papers, 1999, pp. 66-67.
4. K. Washio, E. Ohue, K. Oda, M. Tanabe, H. Shimamoto, and T. Onai, "A selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay," in IEDM Tech. Dig., 1997, pp. 795-798.
5. T SiGe HBT Technology," in IEDM Tech. Dig., 1997, pp. 791-794.
6. E. Ohue, K. Oda, R. Hayami, and K. Washio, "A 7.7-ps CML using selective-epitaxial SiGe HBTs," in Proc. IEEE BCTM Tech. Dig., 1998, pp. 97-100.
7. A. Monroy, M. Laurens, M. Marty, D. Dutartre, D. Gloria, J. L. Carbonero, A. Perrotin, M. Roche, and A. Chantre, "BiCMOS6G: A high performance 0.35 μm SiGe BiCMOS technology for wireless applications," in IEEE BCTM Tech. Dig., 1999, pp. 121-124.
8. K. E. Ehwald, D. Knoll, B. Heienemann, K. Chang, J. Kirchgessner, R. Mauntel, I. S. Lim, J. Steele, P. Schley, B. Tillack, A. Wolff, K. Blum, W. Winkler, M. Pierschel, U. Jagdhold, R. Barth, T. Grabolla, H. J. Erzgräber, B. Hunger, and H. J. Osten, "Modular integration of high-performance SiGe: C HBT's in a deep submicron, epi-free CMOS process," IEDM Tech. Dig., pp. 561-564, 1999.
9. T SiGe HBT BiCMOS, ASIC-compatible, copper interconnect technology for RF and microwave applications," in IEDM Tech. Dig., 1999, 569-572.
10. R. Tang, C. Leung, D. Nguyen, T. Hsu, L. Fritzinger, S. Molloy, T. Esry, T. Ivanov, J. Chu, M. Carroll, J. Huang, W. Moller, T. Campbell, W. Cochran, C. King, M. Frei, M. Mastrapasqua, K. Ng, C. Chen, R. Johnson, R. Pullela, V. Archer, J. Krska, S. Moinian, and H. Cong, "A low-cost modular SiGe BiCMOS technology and analog passives for high-performance RF and wide-band applications," in IEEE BCTM Tech. Dig., 2000, pp. 102-105.
11. S. Decoutere, F. Vleugels, R. Kuhn, R. Loo, M. Caymax, S. Jenei, J. Croon, S. Van Huylenbroeck, M. Da Rold, E. Rosseel, P. Chevalier, and P. Coppens, "A 0.35 μm SiGe BiCMOS process featuring a 80 GHz Fmax HBT and integrated high-Q RF passive components," in IEEE BCTM Tech. Dig., 2000, pp. 106-109.
12. max and 6.7-ps ECL," in IEDM Tech. Dig., 1999, pp. 557-560.
13. K. Washio, E. Ohue, K. Oda, R. Hayami, M. Tanabe, H. Shimamoto, T. Harada, and M. Kondo, "82 GHz dynamic frequency divider in 5.5 ps ECL SiGe HBTs," in IEEE ISSCC Dig. Tech. Papers, 2000, pp. 210-211.
14. max 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications," in IEDM Tech. Dig., 2000, pp. 741-744.
15. T. Hashimoto, T. Kikuchi, K. Watanabe, N. Ohashi, T. Saito, H. Yamaguchi, S. Wada, N. Natsuaki, M. Kondo, S. Kondo, Y. Homma, N. Owada, and T. Ikeda, "A 0.2-μm bipolar-CMOS technology on bonded SOI with copper metallization for ultra high-speed processors," in IEDM Tech. Dig., 1998, pp. 209-212.
16. E. Ohue, R. Hayami, K. Oda, H. Shimamoto, and K. Washio, "5.3-ps ECL and 71-GHz static frequency divider in self-aligned SEG SiGe HBT," in Proc. IEEE BCTM, 2001, pp. 26-29.
17. K. Washio, E. Ohue, K. Oda, R. Hayami, M. Tanabe, and H. Shimamoto, "92-GHz-dynamic and 72-GHz-static frequency dividers using 5.4-ps-ECL self-aligned SEG SiGe HBTs," in Proc. European Solid-State Device Research Conf., Nuremberg, Germany, 2001, pp. 439-442.
18. T. Masuda, K. Ohhata, F. Arakawa, N. Shiramizu, E. Ohue, K. Oda, R. Hayami, M. Tanabe, H. Shimamoto, M. Kondo, T. Harada, and K. Washio, "45 GHz transimpedance 32 dB limiting amplifier and 40 Gb/s 1 : 4 high-sensitivity demultiplexer with decision circuit using SiGe HBT's for 40 Gb/s optical receiver," in IEEE ISSCC Dig. Tech. Papers, 2000, pp. 60-61.
19. K. Ohhata, F. Arakawa, T. Masuda, N. Shiramizu, and K. Washio, "40-Gb/s analog IC chipset for optical receivers-AGC amplifier, full-wave rectifier and decision circuit-Implemented using self-aligned SiGe HBTs," in IEEE IMS Dig., Phoenix, AZ, 2001, pp. 1701-1704.
20. T. Masuda, K. Ohhata, N. Shiramizu, E. Ohue, K. Oda, R. Hayami, H. Shimamoto, M. Kondo, T. Harada, and K. Washio, "40 Gb/s 4 : 1 multiplexer and 1 : 4 demultiplexer IC module using SiGe HBTs," in IEEE IMS Dig., Phoenix, AZ, 2001, pp. 1697-1700.
21. S. Ueno, K. Watanabe, T. Kato, T. Shinohara, K. Mikami, T. Hashimoto, A. Takai, K. Washio, R. Takeyari, and T. Harada, "Single-chip 10 Gb/s transceiver LSI using SiGe SOI/BiCMOS," in IEEE ISSCC Dig. Tech. Papers, 2001, pp. 82-83.
22. T. Masuda, K. Ohhata, N. Shiramizu, S. Hanazawa, M. Kudoh, Y. Tanba, Y. Takeuchi, H. Shimamoto, T. Nagashima, and K. Washio, "Single-chip 5.8 GHz ETC transceiver IC with PLL and demodulation circuits using SiGe HBT/CMOS," in IEEE ISSCC Dig. Tech. Papers, 2002, pp. 96-97.
23. K. Washio, R. Hayami, E. Ohue, K. Oda, M. Tanabe, H. Shimamoto, and M. Kondo, "67-GHz static frequency divider using 0.2-μm self-aligned SiGe HBTs," in IEEE RFIC Symp., Boston, MA, 2000, pp. 31-34.
24. B. Kerzar, M. Mokhtari, Y. Li, B. Hansson, K. Washio, T. Harada, and T. Lewin, "Millimeter-wave bandwidth, SiGe-HBT travelling wave amplifier," in IEEE GaAs IC Symp. Tech. Dig., 2000, pp. 57-59.
25. G. Schuppener, T. Harada, and Y. Li, "A 23-GHz low-noise amplifier in SiGe heterojunction bipolar technology," in IEEE RFIC Symp., Phoenix, AZ, 2001, pp. 177-180.