HICUM/level0 - A simplified compact bipolar transistor model

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2002, Pages 112-115

  Schroter, M ^a   Lehmann, S ^a   Jiang, H ^b   Komarow, S ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b Jazz Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; OPTIMIZATION; SEMICONDUCTING SILICON; TOPOLOGY;

PARAMETER EXTRACTION;

BIPOLAR TRANSISTORS;

EID: 0036437767     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. M. Schroter, "HICUM, a Scalable Physics-based Compact Bipolar Transistor Model", http://www.iee.et.tu-dresden.de/iee/eb, December 2001.
2. J. Paaschans and W. Kloosterman, "The MEXTRAM Bipolar Transistor Model, Level 504", Nat. Lab. Unclassified Report NL-l-UR2000/811, Sept. 2001.
3. M. Schroter and T.-Y. Lee, "A physics-based minority charge and transit time model for bipolar transistors", IEEE Trans. Electron Dev., vol. 46, pp. 288-300, 1999.
4. M. Schroter and D.J. Walkey, "Physical modeling of lateral scaling in bipolar transistors", IEEE J. Solid-State Circuits, Vol. 31, pp. 1484-1491, 1996 and Vol. 33, p. 171, 1998.
5. M. Schroter and D.J. Walkey, "Physical modeling of lateral scaling in bipolar transistors", IEEE J. Solid-State Circuits, Vol. 31, pp. 1484-1491, 1996 and Vol. 33, p. 171, 1998.
6. M. Schroter, M. Friedrich, and H.-M. Rein, "A generalized Integral Charge-Control Relation and its application to compact models for silicon based HBT's", IEEE Trans. Electron Dev.,Vol. 40, pp. 2036-2046, 1993.
7. C. McAndrew et al., "VBIC95, the vertical bipolar intercompany model", IEEE J. Solid-State Circuits, Vol. 31, pp. 1476-1483, 1996.
8. M. Schroter, "Simulation and modeling of the low-frequency base resistance of bipolar transistors in dependence on current and geometry", IEEE Trans. Electron Dev., Vol. 38, pp. 538-544, 1991.
9. C. McAndrew, private communication.
10. M. Schroter et al., "Physics- and process-based bipolar transistor modeling for integrated circuit design", IEEE Journal of Solid-State Circuits, Vol. 34, pp. 1136-1149, 1999.
11. D. Berger et al., "HICUM parameter extraction flow for a single transistor geometry", Proc. BCTM 2002.
12. P. Kempf et al., "SiGe90; A modular 0.18um SiGe BiCMOS technology optimized for wireless applications", submitted for publication.