Staying current with HICUM

IEEE Circuits and Devices Magazine

Volumn 18, Issue 3, 2002, Pages 16-25

  Schroter M ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CMOS INTEGRATED CIRCUITS; COMPUTER AIDED DESIGN; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; ENERGY GAP; EPITAXIAL GROWTH; FIBER OPTIC NETWORKS; HARMONIC DISTORTION; LITHOGRAPHY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SWITCHING; WIRELESS TELECOMMUNICATION SYSTEMS;

HIGH-CURRNET MODELS (HICUM); HIGH-SPEED CIRCUITS; POWER TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036578213     PISSN: 87553996     EISSN: None     Source Type: Journal    
DOI: 10.1109/MCD.2002.1005645     Document Type: Article

References (38)

1. A 210 GHz fT SiGe HBT with a non-self-aligned structure
2. Ultra high speed SiGe NPN for advanced BiCMOS technology
3. The MEXTRAM bipolar transistor model
4. Verification of the integral charge-control relation for high-speed bipolar transistors at high current densities
5. A compact physical large-signal model for high-speed bipolar transistors including the high-current region
6. A compact physical large-signal model for high-speed bipolar transistors at high current densities - Part II: Two-dimensional model and experimental results
7. A compact bipolar transistor model for very high-frequency applications with special regard to narrow stripes and high current densities
8. A generalized integral charge-control relation and its application to compact models for silicon based HBTs
9. Investigation of very fast and high-current transients in digital bipolar circuits by using a new compact model and a device simulator
10. A compact tunneling current and collector breakdown model
11. A physics-based minority charge and transit time model for bipolar transistors
12. Si/SiGe epitaxial-base transistors
13. Enhanced SiGe-HBTs with 160 GHz fmax
14. 75 GHz bipolar production technology for the 21 century
15. High performance 0.25 mm SiGe and SiGeC HBTs using non-selective epitaxy
16. Very-high-speed Si and SiGe bipolar ICs
17. Physics- and process-based bipolar transistor modeling for integrated circuit design
18. A charge-control relation for bipolar transistors
19. The dependence of transistor parameters on the distribution of base-layer resistivity
20. Transit time of high-speed bipolar transistors in dependence on operating point, technological parameters, and temperature
21. Analytical high-current model for the transit time of SiGe HBTs
22. Base spreading resistance of square emitter transistors and its dependence on current crowding
23. Simulation and modeling of the low-frequency base resistance of bipolar transistors in dependence on current and geometry
24. Modeling of the low-frequency base resistance of single base contact bipolar transistors
25. Improving the large signal models of bipolar transistors by dividing the intrinsic base into two lateral sections
26. A simple method for separation of the internal and external (peripheral) currents of bipolar transistors
27. Physical modeling of lateral scaling in bipolar transistors
28. Extraction and modeling of thermal behavior in trench isolated bipolar structures
29. The effects of BJT self-heating on circuit behaviour
30. Modelling substrate effects in the design of high-speed Si-bipolar ICs
31. A scalable high-frequency noise model for bipolar transistors and its application to optimal transistor sizing for low-noise amplifier design
32. Compact modeling of high-frequency distortion in Si integrated bipolar transistors
33. A scalable model generation methodology for bipolar transistors for RF IC design