Barrier effects in SiGe HBT: Modeling of high-injection base current increase

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2004, Pages 104-107

  Fregonese, S ^a   Zimmer, T ^a   Maneux, C ^a   Sulima, P Y ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC FIELDS; MATHEMATICAL MODELS; POISSON EQUATION; SILICON COMPOUNDS;

CARRIER TRANSPORT; ENERGY BAND; PARASITIC BARRIER FORMATION; PHYSICAL SIMULATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 17044396935     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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4. B. Mazhariand and H. Morkoç, "Effect of collector-base valence discontinuity on Kirk effect in double-heterojunction bipolar transistors",Applied Physics Letters 59(17), pp 2162-2164, 21 October 1991.
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8. B. Ardouin, T. Zimmer, D. Berger, D. Céli, H. Mnif, T. Burdeau, P. Fouillat, "Transit time parameter extraction fo the HICUM bipolar compact model", The IEEE Proceedings of Bipolar / BiCMOS Circuits and Technology Meeting, pp. 106-109, MN, USA, 2001.
9. Jan W. Slotboom, G. Steutker, A. Pruijmboom, and D. J. Gravesteijn, "Parasitic Energy Barriers in SiGe HBT's", IEEE Electron Device Letters, vol. 12, N0. 9, pp 486-488 ,september 1991.