SiGe bipolar technology for automotive radar applications

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2004, Pages 84-87

  Bock J ^a   Schafer H ^a   Aufinger, K ^a   Stengl, R ^a   Boguth, S ^a   Schreiter, R ^a   Rest, M ^a   Knapp, H ^a   Wurzer, M ^a   Perndl, W ^a   Bottner T ^a   Meister, T F ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMOTIVE INDUSTRY; CIRCUIT RESONANCE; CRYSTALLINE MATERIALS; FREQUENCIES; OPTIMIZATION; POLYSILICON; RADAR SYSTEMS; SEMICONDUCTING SILICON COMPOUNDS;

AUTOMOTIVE RADAR APPLICATIONS; EMITTERS; OSCILLATION FREQUENCY; TRENCH ISOLATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 20144386613     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. B. Jagannathan et al., IEEE Electronic Device Letters, Vol. 24, No. 5, pp. 324-326, 2003
2. J.S. Rieh et al., IEDM Technical Digest, pp. 771-774, 2002
3. H. Rücker et al., IEDM Technical Digest, pp. 121-124, 2003
4. T. F. Meister et al., Proceedings of the BCTM, pp. 103-106, 2003
5. H. Li et al., accepted for IEEE Journal on Solid-State Circuits, 2004
6. W. Perndl et al., RF IC Symposium, pp. 47-50, 2004