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Volumn , Issue , 2002, Pages 116-119

HICUM parameter extraction methodology for a single transistor geometry

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT DENSITY; OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS;

EID: 0036441872     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (25)

References (10)
  • 3
    • 0027701113 scopus 로고
    • A generalized integral charge-control relation and its application to compact models for silicon based HBT's
    • M. Schröter, M. Friedrich, and H.-M. Rein, "A generalized Integral Charge-Control Relation and its application to compact models for silicon based HBT's", IEEE Trans. Electron Dev., Vol. 40, pp. 2036-2046, 1993.
    • (1993) IEEE Trans. Electron Dev. , vol.40 , pp. 2036-2046
    • Schröter, M.1    Friedrich, M.2    Rein, H.-M.3
  • 4
    • 1942485588 scopus 로고    scopus 로고
    • Extraction of the BC capacitance splitting along the base resistance using HF measurements
    • D. Berger et al., "Extraction of the BC Capacitance Splitting Along the Base Resistance Using HF Measurements", BCTM 2000, pp. 180-183.
    • (2000) BCTM 2000 , pp. 180-183
    • Berger, D.1
  • 5
    • 0035168261 scopus 로고    scopus 로고
    • Direct method for bipolar BE and BC capacitance splitting using high frequency measurements
    • B. Ardouin et al., "Direct Method for Bipolar BE and BC Capacitance Splitting Using High Frequency Measurements", BCTM 2001, pp. 114-117.
    • (2001) BCTM 2001 , pp. 114-117
    • Ardouin, B.1
  • 6
    • 33847336354 scopus 로고    scopus 로고
    • Direct extraction of BC weak avalanche HICUM model parameters
    • Minneapolis, September
    • D. Céli, D. Berger, "Direct Extraction of BC weak Avalanche HICUM model Parameters", HICUM User's Meeting, Minneapolis, September 2001.
    • (2001) HICUM User's Meeting
    • Céli, D.1    Berger, D.2
  • 7
    • 0026623966 scopus 로고
    • Measuring the base resistance of bipolar transistors
    • T. Nakadai, K. Hashimoto, "Measuring the Base Resistance of Bipolar Transistors", BCTM 1991, pp. 200-203.
    • (1991) BCTM 1991 , pp. 200-203
    • Nakadai, T.1    Hashimoto, K.2
  • 8
    • 0035159018 scopus 로고    scopus 로고
    • Transit time parameter extraction for the HICUM bipolar model
    • B. Ardouin et al., "Transit Time Parameter Extraction for the HICUM Bipolar Model", BCTM 2001, pp. 106-109.
    • (2001) BCTM 2001 , pp. 106-109
    • Ardouin, B.1
  • 9
    • 0011726723 scopus 로고    scopus 로고
    • T determination
    • Dresden, June
    • T determination", HICUM workshop, Dresden, June 2002.
    • (2002) HICUM workshop
    • Malomy, M.1
  • 10
    • 0035164139 scopus 로고    scopus 로고
    • High performance 0.25mm SiGe and SiGe:C HBTs using non selective epitaxy
    • H. Baudry et al., "High Performance 0.25mm SiGe and SiGe:C HBTs Using Non Selective Epitaxy", BCTM 2001, pp. 52-55.
    • (2001) BCTM 2001 , pp. 52-55
    • Baudry, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.