Analytical high-current model for the transit time of SiGe HBTs

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 1998, Pages 199-202

  Wilms, Stefan ^a   Rein, Hans Martin ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; TRANSIT TIME DEVICES;

COLLECTOR CURRENT DENSITY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032306523     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)