Simulation and modelling of transport properties in strained-Si and strained-Si/SiGe-on-insulator MOSFETs

Solid-State Electronics

Volumn 48, Issue 8, 2004, Pages 1347-1355

  Roldan J B ^a   Gamiz F ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

Electron mobility; Inversion charge centroid; Strained Si MOSFET mobility model; Strained Si SiGe MOSFETs; Strained Si SiGe OI MOSFETs; Velocity overshoot

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; ELECTRON MOBILITY; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; MONTE CARLO METHODS; SCATTERING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SOLID STATE DEVICES; STRAIN; SURFACE ROUGHNESS; ULTRATHIN FILMS;

INVERSION CHARGE CENTROID; STRAINED-SI MOSFET MOBILITY MODEL; STRAINED-SI/SIGE MOSFETS; STRAINED-SI/SIGE-OI MOSFETS; VELOCITY OVERSHOOT;

MOSFET DEVICES;

EID: 2342574972     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.01.016     Document Type: Article

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