Band offset predictions for strained group IV alloys: Si1-x-yGexCy on Si(001) and Si1-xGex on Si1-zGez(001)

Semiconductor Science and Technology

Volumn 15, Issue 6, 2000, Pages 565-572

  Galdin, Sylvie ^a   Dollfus, Philippe ^a   Aubry Fortuna, Valérie ^a   Hesto, Patrice ^a   Osten, H Jörg ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

BAND OFFSET; CARRIER CONFINEMENT; CONDUCTION BAND; HYDROSTATIC STRAIN; INTRINSIC CHEMICAL EFFECT; UNIAXIAL STRAIN; VALENCE BAND;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033722229     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/6/314     Document Type: Article

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