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Journal of Materials Science: Materials in Electronics

Volumn 12, Issue 4-6, 2001, Pages 245-248

Band offsets and electron transport calculation for strained Si1-x-yGexCy/Si heterostructures

(4) Dollfus, P a Galdin, S a Hesto, P a Osten, H J b

a UNIVERSITÉ PARIS SACLAY (France)

b IHP (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTORS; MONTE CARLO METHODS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; TENSILE PROPERTIES; THERMODYNAMIC STABILITY;

ALLOY SCATTERING; BAND OFFSET CALCULATION; TENSILE STRAIN;

HETEROJUNCTIONS;

EID: 0035299718 PISSN: 09574522 EISSN: None Source Type: Journal
DOI: 10.1023/A:1011211420560 Document Type: Article

Times cited : (6)

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