Strained silicon on SiGe: Temperature dependence of carrier effective masses

Journal of Applied Physics

Volumn 94, Issue 8, 2003, Pages 5088-5094

  Richard, Soline ^a   Cavassilas, Nicolas ^b   Aniel, Frédéric ^a   Fishman, Guy ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; HAMILTONIANS; SEMICONDUCTING SILICON; STRAIN;

VALENCE BAND;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0242304168     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1609051     Document Type: Article

References (25)

1. M. V. Fischetti and S. E. Laux, J. Appl. Phys. 80, 2234 (1996).
2. F. Aniel et al., Solid-State Electron. 47, 283 (2003).
3. N. Cavassilas, F. Aniel, K. Boujdaria, and G. Fishman, Phys. Rev. B 64, 115207 (2001).
4. S. Richard, N. Cavassilas, F. Aniel, and G. Fishman, J. Appl. Phys. 94, 1795 (2003).
5. M. M. Rieger and P. Vogl, Phys. Rev. B 48, 14276 (1993).
6. P. Vogl, H. P. Hjalmarson, and J. D. Dow, J. Phys. Chem. Solids 44, 365 (1983).
7. K. Boujdaria, S. Ridene, and G. Fishman, Phys. Rev. B 63, 235302 (2001). The Luttinger like parameters were first introduced by Pidgeon and Brown [Phys. Rev. 146, 575 (1966)] to describe simultaneously the lowest conduction band and the highest valence band and suitably modified by N. Cavassilas, F. Aniel, K. Boujdaria, and G. Fishaman, Phys. Rev. B 64, 115207 (2001) to take into account the twenty band model used throughout this article.
8. K. Boujdaria, S. Ridene, and G. Fishman, Phys. Rev. B 63, 235302 (2001). The Luttinger like parameters were first introduced by Pidgeon and Brown [Phys. Rev. 146, 575 (1966)] to describe simultaneously the lowest conduction band and the highest valence band and suitably modified by N. Cavassilas, F. Aniel, K. Boujdaria, and G. Fishaman, Phys. Rev. B 64, 115207 (2001) to take into account the twenty band model used throughout this article.
9. K. Boujdaria, S. Ridene, and G. Fishman, Phys. Rev. B 63, 235302 (2001). The Luttinger like parameters were first introduced by Pidgeon and Brown [Phys. Rev. 146, 575 (1966)] to describe simultaneously the lowest conduction band and the highest valence band and suitably modified by N. Cavassilas, F. Aniel, K. Boujdaria, and G. Fishaman, Phys. Rev. B 64, 115207 (2001) to take into account the twenty band model used throughout this article.
10. K. Rim, J. L. Hoyt, and J. F. Gibbons, Tech. Dig. - Int. Electron Devices Meet. 1998, 707 (1998).
11. F. Aniel, N. Zerounian, R. Adde, M. Zeuner, T. Hackbarth, and U. König, IEEE Trans. Electron Devices 47, 1447 (2000).
12. F. M. Bufler, P. Graf, and B. Meinerzhagen, VLSI Design 8, 41 (1998).
13. J. P. Dismukes, L. Ekstrom, and L. J. Paff, J. Phys. Chem. 68, 3021 (1964).
14. G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Wiley, New York, 1974).
15. A. Blacha, H. Presting, and M. Cardona, Phys. Status Solidi B 126, 11 (1984).
16. F. Schäffler, Semicond. Sci. Technol. 12, 1515 (1997).
17. Semiconductors: Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds, Landölt-Bornstein, New Series Group III, Vol. 22, Part a, edited by O. Madelung (Springer, Berlin, 1987).
18. C. D. Thurmond, J. Electrochem. Soc. 122, 1133 (1975).
19. N. W. Ashcroft and N. D. Mermin, Solid-State Physics (Saunders College, Philadelphia, 1976).
20. G. Gilat and L. J. Raubenheimer, Phys. Rev. 144, 390 (1966).
21. http://www.research.ibm.com/DAMOCLES/html_flles/numerics.html#inverse.
22. R. L. Chelikowsky and M. L. Cohen, Phys. Rev. 14, 556 (1976).
23. S. Y. Ren, X. Chen, and J. D. Dow, J. Phys. Chem. Solids 59, 403 (1998).
24. E. O. Kane, Phys. Rev. 159, 624 (1967).
25. G. F. Koster, J. O. Dimmock, R. G. Wheeler, and H. Statz, Properties of the Thirty-Two Point Groups (M.I.T. Press, Cambridge, MA, 1963).