High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

Solid-State Electronics

Volumn 47, Issue 2, 2003, Pages 283-289

  Aniel, Frederic ^a   Enciso Aguilar, M ^a   Giguerre, L ^a   Crozat, P ^a   Adde, R ^a   Mack, T ^b   Seiler, U ^b   Hackbarth, Th ^b   Herzog, H J ^b   Konig U ^b   Raynor, B ^c  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b DAIMLER AG   (Germany)

^c FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Heterojunctions; MODFET; Noise; Quantum well; SiGe

Indexed keywords

COMPUTER SIMULATION; ELECTRIC RESISTANCE; FREQUENCIES; OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS;

GATE STRAINED;

MOSFET DEVICES;

EID: 0037290322     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00208-3     Document Type: Conference Paper

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