Theory of electron-mobility degradation caused by roughness with long correlation length in strained-silicon devices

Journal of Applied Physics

Volumn 94, Issue 1, 2003, Pages 465-470

  Kitagawa, Isao ^a   Maruizumi, Takuya ^a   Sugii, Nobuyuki ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; MONTE CARLO METHODS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SURFACE ROUGHNESS;

STRAINED-SILICON DEVICES;

HETEROJUNCTIONS;

EID: 0041840534     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1582231     Document Type: Article

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