Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 288-295

  Gamiz F ^a   Cartujo Cassinello, P ^a   Roldan J B ^a   Jimenez Molinos F ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN TRANSPORT EQUATION; CARRIER CONFINEMENTS; CARRIER DISTRIBUTIONS; ELECTRON TRANSPORT; GERMANIUM MOLE FRACTION; LAYER THICKNESS; MOBILITY VALUE; MONTE CARLO SIMULATORS; OXIDE LAYER; SCHROEDINGER EQUATIONS; SI/SIGE; SIGE-ON-INSULATOR SUBSTRATES; SILICON LAYER; SILICON-ON-INSULATOR DEVICES; STRAINED-SI; STRAINED-SILICON; VELOCITY OVERSHOOT;

ELECTRON MOBILITY; GERMANIUM; INVERSION LAYERS; MONTE CARLO METHODS; PHONON SCATTERING; POISSON DISTRIBUTION; SCHRODINGER EQUATION; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON; SILICON ON INSULATOR TECHNOLOGY;

SEMICONDUCTING SILICON;

EID: 84861450304     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1481962     Document Type: Article

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