Interface roughness scattering and its impact on electron transport in relaxed and strained Si n-MOSFETs

Semiconductor Science and Technology

Volumn 19, Issue 4 SPEC. ISS., 2004, Pages

  Borici M ^a   Watling, J R ^a   Wilkins, R C W ^a   Yang, L ^a   Barker, J R ^a   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSITIONS; FERMI LEVEL; LOGIC GATES; MATHEMATICAL MODELS; PROBABILITY; SCATTERING; SEMICONDUCTING SILICON; SURFACE ROUGHNESS;

BOLTZMANN TRANSPORT EQUATION (BTE); INTERFACE ROUGHNESS SCATTERING;

MOSFET DEVICES;

EID: 1942484827     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/4/054     Document Type: Conference Paper

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