Si/Si1 - XGex heterostructures: Electron transport and field-effect transistor operation using monte carlo simulation

Journal of Applied Physics

Volumn 82, Issue 8, 1997, Pages 3911-3916

  Dollfus, Philippe ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000853776     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365696     Document Type: Article

References (22)

1. G. Abstreiter, H. Brugger, T. Wolf, H. Jorke, and H. J. Herog, Phys. Rev. Lett. 54, 2441 (1985).
2. L. Garchery, I. Sagnes, and P. A. Badoz, Appl. Surf. Sci. 102, 202 (1996).
3. K. Ismail, S. F. Nelson, J. O. Chu, and B. S. Meyerson, Appl. Phys. Lett. 63, 660 (1993).
4. U. König, A. J. Boers, F. Schäffer, and E. Kasper, Electron. Lett. 28, 160 (1992).
5. K. Ismail, S. Rishton, J. O. Chu, K. Chan, and B. S. Meyerson, IEEE Electron Device Lett. ED-14, 348 (1993).
6. R. People, IEEE J. Quantum Electron. 22, 1696 (1986).
7. F. Stern and E. Laux, Appl. Phys. Lett. 61, 1110 (1992).
8. C. Canali, C. Jacoboni, F. Nava, G. Ottaviani, and A. Alberigi-Quaranta, Phys. Rev. B 12, 2265 (1975).
9. C. Jacoboni and L. Reggiani, Rev. Mod. Phys. 55, 645 (1983).
10. J. Y. Tang and K. Hess, J. Appl. Phys. 54, 5139 (1983).
11. M. V. Fischetti and S. E. Laux, Phys. Rev. B 38, 9721 (1988).
12. H. W. Streitwolf, Phys. Status Solidi 37, 47 (1970).
13. D. K. Ferry, Phys. Rev. B 14, 1605 (1976).
14. T. Yamada, J. R. Zhou, H. Miyata, and D. K. Ferry, IEEE Trans. Electron Devices ED-41, 1513 (1994).
15. C. Brisset, P. Dollfus, N. Chemarin, R. Castagné, and P. Hesto, Proceedings of the 5th International Conference on Simulation of Semiconductor Devices and Processes, Wien, (Springer, Wien, 1993), p. 189.
16. M. Asche and O. G. Sarbei, Phys. Status Solidi B 103, 11 (1981).
17. M. H. Jorgensen, Phys. Rev. B 18, 5657 (1978).
18. N. Sano, T. Aoki, M. Tomizawa, and A. Yoshii, Phys. Rev. B 41, 12 122 (1990).
19. J. W. Harrison and J. R. Hauser, Phys. Rev. B 13, 5347 (1976).
20. B. Pejčinović, L. E. Kay, T. W. Tang, and D. H. Davon, IEEE Trans. Electron Devices ED-36, 2129 (1989).
21. M. Ershov and V. Ryzhii, Jpn. J. Appl. Phys. 133, 1365 (1994).
22. M. V. Fischetti, and S. E. Laux, J. Appl. Phys. 80, 2234 (1996).