Low field electron mobility in ultra-thin SOI MOSFETs: Experimental characterization and theoretical investigation

Solid-State Electronics

Volumn 48, Issue 6, 2004, Pages 927-936

  Esseni, David ^a   Sangiorgi, Enrico ^b  

^a UNIVERSITY OF UDINE   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTANCE; ELECTRON MOBILITY; GATES (TRANSISTOR); INTERFACES (MATERIALS); OXIDATION; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; ULTRATHIN FILMS; VOLTAGE MEASUREMENT;

CHANNEL DOPING; SHORT CHANNEL EFFECTS (SCE);

MOSFET DEVICES;

EID: 1442287314     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.12.027     Document Type: Article

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