Pulsed laser deposition of lead-zirconate-titanate thin films and multilayered heterostructures

Applied Physics A: Materials Science and Processing

Volumn 81, Issue 4, 2005, Pages 701-714

  Zhu, T J ^a   Lu, L ^a   Lai, M O ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ORIENTATION; METAL INTEGRATION; METALORGANIC DEPOSITION (MOD); PZT THIN FILMS;

CAPACITORS; DENSITY (SPECIFIC GRAVITY); FERROELECTRIC THIN FILMS; HETEROJUNCTIONS; LEAD COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MULTILAYERS; SPUTTER DEPOSITION; TITANIUM COMPOUNDS; ZIRCONIUM COMPOUNDS;

PULSED LASER DEPOSITION;

EID: 22044436701     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-005-3227-z     Document Type: Article

References (174)

1. R. Ramesh, S. Aggarwal, O. Auciello: Mater. Sci. Eng. R 32, 191 (2001)
2. M. Sayer, K. Sreenivas: Science 247, 1056 (1990)
3. J.F. Scott. C.A. Paz de Araujo: Science 246, 1400 (1989)
4. P.K. Larsen, R. Cuppens, G. Spierings: Ferroelectrics 128: 265 (1992)
5. R. Ramesh, W.K. Chan, H. Gilchrist, B. Willens, T. Scands, J.M. Tarascon, V.G. Keramidas, J.J.T. Evans, F.D. Gealy, K. Fork: Oxide ferroelectric/cuprate superconductor heterostructures: growth and properties, in: Mater. Res. Soc. Symp. Proc. (Materials Research Society. Pittsburgh, Pennsylvania 1992) p. 477
6. S.B. Majumder, Y.N. Mohapatra, D.C. Agrawal: Appl. Phys. Lett. 70, 138 (1997)
7. H.M. Yang. J.S. Luo, W.T. Lin: J. Mater. Res. 12, 1145 (1997)
8. M. Alexe, J.F. Scott, C. Curran, N.D. Zakharov, D. Hesse, A. Pignolet: Appl. Phys. Lett. 73, 1592 (1998)
9. O. Auciello, R. Waser: Science and Technology of Electroceramic (Thin Films, Kluwer Academic, Boston 1995)
10. L.A. Knauss, J.M. Pond, J.S. Horwitz, D.B. Chrisey, C.H. Mueller, R. Treece: Appl. Phys. Lett. 69, 25 (1996)
11. S.V. Kalinin, D.A. Bonnell: Appl. Phys. Lett. 78, 1116 (2001)
12. Y. Yoneda, K. Sakaue, H. Terauchi: Jpn J. Appl. Phys. 40, 6888 (2000)
13. X.H. Zhu, S.G. Lu, C.L. Choy, H.L.W. Chan, K.H. Wong: Int. Ferroelectrics 36, 73 (2001)
14. P.V. Burmistrova, A.S. Sigov, K.A. Vorotilov, D.N. Zakharov, O.M. Zhigalina: Ferroelectrics 286, 983 (2003)
15. L. Kim. D.G. Jimg, J. Kim, Y.S. Kim, J. Lee: Appl. Phys. Lett. 82, 2118 (2003)
16. D.L. Polta: Microelectron. Eng. 29, 51 (1995)
17. D.L. Polla, P.J. Schiller: Int. Ferroelectrics 7, 359 (1995)
18. M. Alguero, A.J. Bushby, P. Hvizdos, M.J. Reece, R.W. Whatmore, Q. Zhang: Int. Ferroelectrics 41, 1705 (2001)
19. M. Alguero, A.J. Bushby, M.J. Reece, M.L. Calzada, L. Pardo: Int. Ferroelectrics 32, 775 (2001)
20. A. Kholkin: Ferroelectrics 258, 501 (2001)
21. A.R. James. X.X. Xi: Int. Ferroelectrics 51, 91 (2003)
22. B.J. Kim, S. Baik, Y. Poplavko, Y. Prokopenko, J.Y. Lim, B.M. Kim: Int. Ferroelectrics 34, 1647 (2001)
23. S.W. Kirchoefer, J.M. Pond, A.C. Carter. W. Chang, K.K. Agarwal, J.S. Horwitz, D.B. Chrisey: Microw. Opt. Technol. Lett. 18, 168 (1998)
24. M. Lorenz, H. Hochmuth, M. Schallner, R. Heidinger, D. Spemann, M. Grundmann: Solid-State Electron. 47, 2199 (2003)
25. H. Wang: J. Inorg. Mater. 19, 153 (2004)
26. K.M. Satyalakshmi, M. Alexe, A. Pignolet, N.D. Zakharov, C. Harnagea, S. Senz, D. Hesse: Appl. Phys. Lett. 74, 603 (1999)
27. A. Shibuya, M. Noda, M. Okuyama, H. Fujisawa, M. Shimizu: Appl. Phys. Lett. 82, 784 (2003)
28. A. Fundora, E. Martinez, H. Amorin, O.E. Contreras, J.M. Siqueiros: J. Electroceram. 6, 21 (2001)
29. W.B. Wu, K.H. Wong, C.L. Choy, Y.H. Zhang: Appl. Phys. Lett. 77, 3441 (2000)
30. N.A. Pertsev, J.R. Contreras. V.G. Kukhar, B. Hermanns, H. Kohlstedt, R. Waser: Appl. Phys. Lett. 83, 3356 (2003)
31. S.B. Majumder, B. Roy, R.S. Katiyar, S.B. Krupanidhi: Appl. Phys. Lett. 79, 239 (2001)
32. C. Guerrero, J. Roldan, C. Ferrater, M.V. Garcia-Cuenca, F. Sanchez, M. Varela: Solid-State Electron. 45, 1433 (2001)
33. C. Guerrero, C. Ferrater, J. Roldan, V. Trtik, F. Benitez, F. Sanchez, M. Varela: Appl. Surf. Sci. 154, 500 (2000)
34. C.C. Leu, M.C. Yang, C.T. Hu, C. H. Chien, M.J. Yang, T.Y. Huang: Appl. Phys. Lett. 79. 3833 (2001)
35. W.F. Zhang, M.S. Zhang, Z. Yin, Y.Z. Gu, Z.L. Du. B.L. Yu: Appl. Phys. Lett. 75, 902 (1999)
36. M.A. Zurbuchen,. J. Lettieri, S.J. Fulk, Y. Jia, A.H. Carim, D.G. Schlom, S.K. Streiffer: Appl. Phys. Lett. 82, 4711 (2003)
37. T. Yoshimura, S. Trolier-McKinstry: J. Appl. Phys. 92, 3979 (2002)
38. S. Bhaskar, S.B. Majumder, P.S. Dohal, R.S. Katiyar, S.B. Krupanidhi: J. Appl. Phys. 89, 5637 (2001)
39. P.X. Yang, D.L. Carroll, J. Ballato, R.W. Schwartz: J. Appl. Phys. 93, 9226 (2003)
40. G. Suyal, S.S.N. Bharadwaja, M. Cantoni, D. Damjanovic, N. Setter: J. Electroceram. 9, 187 (2003)
41. O. Auciello, J.F. Scott, R. Ramesh: Phys. Today 51, 22 (1998)
42. A. Wu. P.M. Vilarinho, I. Reaney, I.M.M. Salvado: Chem. Mater. 15, 1147 (2003)
43. D. Wu, YD. Xia, A.D. Li, Z.G. Liu, N.B. Ming: J. Appl. Phys. 94, 7376 (2003)
44. Y. Nishioka, T. Masuda, M. Kajinuma, T. Yamada, M. Uematsu, K. Sun: Int. Ferroelectrics 59, 1445 (2003)
45. Y.R. Luo, J.M. Wu: Jpn J. Appl. Phys. 42, 242 (2003)
46. F. Weiss, J. Lindner, J.P. Senateur, C. Duhourdieu, V. Galindo, M. Audier, A. Abrutis, M. Rosina, K. Frohlich, W. Haessler, S. Oswald, A. Figucras, J. Santiso: Surf. Coat. Techn. 133. 191 (2000)
47. R.W. Schwartz, J.A. Voigt, B.A. Tuttle, D.A. Payne, T.L. Reichert, R.S. DaSalla: J. Mater. Res. 12, 444 (1997)
48. T. Tuchiya, T. Itoh, G. Sasaki, T. Suga: J. Ceram. Soc. Jpn. 104, 159 (1996)
49. Douglas H. Lowndes, D.B. Geohegan, A.A. Puretzky, D.P. Norton, C.M. Rouleau: Science 273, 898 (1996)
50. rd end. (Springer. Berlin 2000)
51. D. Dijkkamp, T. Venkatesan, X.D. Wu, S.A. Shaheen, N. Jisrawi, Y.H. Min-Lee, W.L. McLean, M. Croft: Appl. Phys. Lett. 51, 619 (1987)
52. X.D. Wu. D. Dijkkamp, S.B. Ogale, A. Inam, L.W. Chase, P.F. Miceli, C.C. Chang, J.M. Tarascon, T. Venkatesan: Appl. Phys. Lett. 51, 861 (1987)
53. O. Auciello, C.M. Foster, R. Ramesh: Annu. Rev. Mater. Sci. 28, 501 (1998).
54. J.F Scott: Ferroelectric Memories (Springer. Berlin 2000)
55. C.P.d. Araujo, J.F. Scott, G.W. Taylor: Ferroelectric Thin Films: Systhesis and Basic Properties (Gordon and Breach. Australia 1996)
56. R. Ramesh: Thin Film Ferroelectric Materials and Devices (Kluwer Academic Publisher, Boston 1997)
57. O. Auciello, R. Ramesh: MRS Bull. 21, 31 (1996)
58. O. Auciello. H.N. Al-shareef. K.D. Gifford, D.J. Lichtenwalner, R. Dat, K.R. Bellur, A.I. Kinyon, R. Ramesh: A review of orientation-microstructure- property relationships for PZT/metal or metal-oxide layered heterostructures, in: Mat. Res. Soc. Symp. Proc. (Materials Research Society 1994) p. 341
59. F. Craciun, P. Verardi, M. Dinescu: Piezoelectric Thin Films: Processing and properties, Handbook of thin film materials, ed. by H.S. Nalwa, Vol. 3. Ferroelectric and Dielectric Thin Films (Academic Press 2002) p. 231
60. R. Waser: Curr. Opin.Sol. St. Mater. Sci. 1, 706 (1996)
61. N. Setter: J. Eur. Ceram. Soc. 21, 1279 (2001)
62. C. Bjoermander, A.M. Grishin, B.M. Moon, J. Lee, K.V. Rao: Appl. Phys. Lett. 64, 3646 (1994)
63. P. Verardi, M. Dinescu, F. Craciun, A. Perrone: Appl. Surf. Sci. 129, 457 (1998)
64. G.C. Tyrrell, T.H. York, L.G. Coccia, I.W. Boyd: Appl. Surf. Sci. 96-8, 769 (1996)
65. O. Auciello, J. Emerick, J. Duarte, A. Illingworth: J. Vac. Sci. Technol. A 11, 267 (1993)
66. S. Metev, K. Meteva: Appl. Surf. Sci. 43, 402 (1989)
67. R.K. Singh, J. Narayan: Phys. Rev. B 41, 8843 (1990)
68. D.B. Chrisey, G.K. Hubler: Pulsed leaser Deposition of Thin Films. (John Wiley & Sons, New York 1994)
69. R.K. Singh, O.W. Holland, J. Narayan: J. Appl. Phys. 68, 233 (1990)
70. S.I. Anisimov, D. Bauerle, B.S. Luk'yanchuk: Phys. Rev. B. 49, 12076 (1993)
71. M.E. Lines, A.M. Glass: Principles and Applications of Ferroelectric and Related Materials (Clarendon. Oxford 1977)
72. R.E. Leuchtner, J.S. Horwitz, D.B. Chrisey: Mater. Res. Soc. Symp. Proc. 285, 87 (1993)
73. J.S. Horwitz, K.S. Grabowski, D.B. Chrisey, R.E. Ieuchtner: Appl. Phys. Lett. 59, 1565 (1991)
74. S.K. Hau, K.H. Wong, P.W. Chan, C.L. Choy: Appl. Phys. Lett. 66, 245 (1995)
75. C.S. Ma, S.K. Hau, K.H. Wong, P.W. Chan, C.L. Choy: Appl. Phys. Lett. 69, 2030 (1996)
76. M. Tyunina, J. Levoska, S. Leppaevuori: J. Appl. Phys. 83, 5489 (1998)
77. T.J. Zhu, L. Lu: J. Appl. Phys. 95, 241 (2004)
78. J.G.A. Petersen, J.R. McNeil: Thin Solid Films 220, 87 (1992)
79. A. Morimoto, S. Otsubo, T. Shimizu: Mater. Res. Soc. Symp. Proc. 191, 31 (1990)
80. N.J.C. Ingle, R.H. Hammond, M.R. Beasley, D.H.A. Blank: Appl. Phys. Lett. 75, 4162 (1999)
81. R.E. Leuchtner, K.S. Grabowski, D.B. Chrisey, J.S. Horwtz: Appl. Phys. Lett. 60, 1193 (1992)
82. D. Roy. S.B. Kmpanidhi, J.P. Dougherty: J. Vac. Sci. Technol. A10, 1827 (1992)
83. K.F. Etzold, R.A. Roy. K.L. Saenger: Mater. Res. Soc. Symp. Proc. 243, 489 (1992)
84. K.S. Grabowski, J.S. Horwitz, D.B. Chrisey: Ferroelectrics 116, 19 (1991)
85. D.B. Chrisey, J.S. Horwitz, K.S. Grabowski: Mater. Res. Soc. Symp. Proc. 191, 25 (1990)
86. K.S. Hwany, T. Manabe, T. Nayahama, I. Yamaguchi, T. Kumayai, S. Mizuta: Thin Solid Films 347, 106 (1999)
87. D. Roy, S.B. Krupanidhi, J.P. Dougherty: J. Appl. Phys. 69, 7930 (1991)
88. R. Ramesh, A. Inam, W.K. Chan, F. Tillerot, B. Willens, C.C. Chang, T. Scands, J.M. Tarascon, V.G. Keramidas: Appl. Phys. Lett. 59, 3542 (1991)
89. T. Maeder, P. Muralt: Mater. Res. Soc. Symp. Proc. 341, 361 (1994)
90. H. Tabata, O. Murata, T. Kawai, S. Kawai, M. Okuyama: Jpn. J. Appl. Phys. 31, 2968 (1992)
91. H. Tabata, T. Kawai, S. Kawai: Appl. Phys. Lett. 59, 2354 (1991)
92. X.M. Lu, J.S. Zhu, W.S. Hu, Z.G. Liu, Y.N. Wang: Appl. Phys. Lett. 66, 2481 (1995)
93. Y. Zhu, J. Zhu, Y.J. Song, S.B. Desu: Appl. Phys. Lett. 73, 1958
94. R. Ramesh, D.G. Schlom: Science 296, 1975
95. O. Auciello, L. Mantese, J. Duarte, X. Chen, S.H. Ron, A.I. Kingon, A.F. Schreiner, A.R. Krauss: J. Appl. Phys. 73, 5197
96. G. Koster, O.J.H.M. Rijnders, D.H.A. Blank, H. Rogalla: Appl. Phys. Lett. 74, 3729
97. G.Z. Yang, H.B. Lu, Z.H. Chen, D.F. Cui, H.S. Wang, H.Q. Yang, F.Y. Miao, Y.L. Zhuo, L. Li: Sci. Chin. A 28, 260 (1998)
98. T. Venkatesan, X.D. Wu, A. Inam, J.B. Wachtman: Appl. Phys. Lett. 52, 1193
99. D.J. Lichtenwalner, O. Auciello, R. Dat. A.I. Kingon: J. Appl. Phys. 74, 7497
100. M. Tyunina, S. Leppaevuori: J. Appl. Phys. 87, 8132
101. M. Lorenz, H. Hochmuth, H. Boerner, D. Natusch, K. Kreher: Mater. Res. Soc. Symp. Proc. 341, 189 (1994)
102. B. Schey, W. Biegel, M. Kuhn, B. Stritzker: Appl. Phys. A 69, S419 (1999)
103. M. Siegert, W. Zander, J. Lisoni, J. Schubert, C. Buchal: Appl. Phys. A 69, S779 (1999)
104. W. Biegel, R. Klarmann, B. Stritzker, B. Schey, M. Kuhn: Appl. Surf. Sci. 168, 227 (2000)
105. H. Buhay, S. Sinharoy, M.H. Francombe, W.U. Kasner, J. Tavlacchio, B.K. Park, N.J. Doyle, D.R. Lampe, M. Polinsky: Proc. Int. Ferroelectrics 1, 213 (1992)
106. J.A. Greer, M.D. Tabat: J. Vac. Sci. Technol. A 13, 1175
107. J.A. Greer: J. Vac. Sci. Technol. A 10, 1821
108. T. Kumazawa: Appl. Phys. Lett. 72, 608 (1998)
109. 3 based thin film ferroelectric nonvolatile memories, in: Thin Film Ferroelectric Materials and Devices, ed. by R. Ramesh (Kluwer Academic, Boston 1997) p. 145
110. P. Verardi, M. Dinescu, F. Craciun, R. Dinu, M.F. Ciobanu: Appl. Phys. A 69, 837 (1999)
111. A.K. Tagantsev, M. Landivar, L. Colla, N. Setter: J. Appl. Phys. 78, 2623
112. E.I. Colla, S. Hong, D.V. Taylor, N. Setter, K. No: Appl. Phys. Lett. 72, 2763
113. R. Ramesh, A. Inam, W.K. Chan, B. Willens, K. Myers, K. Remschnig, D.L. Hart, J.M. Tarascon: Science 252, 944 (1991)
114. R. Ramesh, W.K. Chan, B. Wilkens, H. Gilchrist, T. Sands, J.M. Tarascon. V.G. Keramidas, D.K. Fork, J. Lee, A. Safari: Appl. Phys. Lett. 61, 1537
115. O. Auciello, K.D. Gifford, A.I. Kingon: Appl. Phys. Lett. 64, 2873 1994
116. D.P. Vijay, C.K. Kwok, W. Pan, S.B. Desu: Electrode effects on electrical properties of ferroelectric thin films. In: Proceedings of The Eighth International Symposium on Applications of Ferroelectrics (IEEE 1992) p.408
117. K.R. Bellur, H.N. Al-Shareef, S.H. Ron, K.D. Clifford, O. Auciello, A.I. Kingon: Electrical characterization of sol-gel derived PZT thin films. In: Proceedings of The Eighth International Symposium on Applications of Ferroelectrics (New York. IEEE 1992) p. 448
118. H.N. Al-Shareef, K.R. Bellur, A.I. Kingon. O. Auciello: Appl. Phys. Lett. 66, 239(1995)
119. K. Maki. B.T. Lin, H. Vu, V. Nagarajan, R. Ramesh: Appl. Phys. Lett. 82, 1263 (2003)
120. T. Nakamura, Y. Nakao, A. Kamisawa, H.Takasu: Appl. Phys. Lett. 65, 1522 (1994)
121. J.T. Cheung, P.E.D. Morgan. R. Neurogankar: in Proceedings of the Fourth International Symposium on Integrated Ferroelectrics (Switzer-land. Gordon and Breach Science 1992) p. 158
122. J.T. Cheung, P.E.D. Morga, D.H. Lowndes, X.-Y. Zheng, J. Breen: Appl. Phys. Lett. 62, 2045 (1993)
123. R. Ramesh, H. Gilchrist, T. Sands, V.G. Keramidas, R. Haakenaasen, D.K. Fork: Appl. Phys. Lett. 63, 3592 (1993)
124. H.N. Al-Shareef, B.A. Tuttle, W.L. Warren, D. Dimos, M.V. Raymond, M.A. Rodriguez: Appl. Phys. Lett. 68, 272 (1993)
125. C.B. Eom, R.B. Van Dover, J.M. Phillips, D.J. Werder. J.H. Marshall, C.H. Chen, R.J. Cava. R.M. Fleming, D.K. Fork: Appl. Phys. Lett. 63, 2570 (1993)
126. S. Aggarwal, I.G. Jenkins. B. Nagaraj, C.J. Kerr, C. Canedy, R. Ramesh: Appl. Phys. Lett. 75, 1787 (1999)
127. J.H. Cho, K.C. Park: Appl. Phys. Lett. 75, 549 (1999)
128. K.M. Satyalakshmi, R.M. Mallya, K.V. Ramanathan, X.D. Wu, B. Brainard, D.C. Gautier, N.Y. Vasanthacharya, M.S. Hedge: Appl. Phys. Lett. 62, 1233 (1993)
129. T. Yu, Y. Chen, Z. Liu, S. Xiong, L. Sun, X. Chen, L. Shi, N. Ming: Appl. Phys. Lett. 69, 2092 (1996)
130. W. Wu, K.H. Wong, C.L. Choy: J. Vac. Sci. Technol. A 18, 79 (2000)
131. B.G. Chae, Y.S. Yang, S.H. Lee, M.S. Jang, S.J. Lee, S.H. Kim, W.S. Back, S.C. Kwon: Thin Solid Films 410, 107 (2002)
132. T.J. Zhu, L. Lu: Appl. Phys. A, in press, published online (2004)
133. W. Wu. K.H. Wong, X.G. Li, C.L. Choy, Y.H. Zhang: J. Appl. Phys. 87, 3006 (2000)
134. W. Wu, F. Lu, K.H. Wong, G. Pang, C.L. Choy, Y. Zhang: J. Appl. Phys. 88. 700 (2000)
135. R. Ramesh, O. Auciello, V.G. Keramidas, R. Dal: Pulsed laser ablation-deposition and characterization of ferroelectric metal oxide heterostructures, in Science and Technology of Electroceramic Thin Films, ed. by O. Auciello, R.Waser (Kluwer Academic, Dordrecht 1995) p. 1
136. Y. Watanabe: Appl. Phys. Lett. 66, 1770 (1995)
137. C.H. Ahn, J.M. Triscone, N. Archibald, M. Decroux, R.H. Hammond. T.H. Geballe, O. Fischer, M.R. Beasley: Science 269, 373 (1995)
138. Z.W. Dong, Z. Trajanovic, T. Boettcher, I. Takeuchi, V. Talyansky, C.H. Chen, R.P. Sharma, R. Ramesh, T. Venkatesan: IEEE Trans. Appl. Supercond. 7, 3516 (1997)
139. S. Mathews. R. Ramesh, T. Venkatesan, J. Benedetto: Science 276, 238 (1997)
140. C.H. Ahn. R.H. Hammond, T.H. Geballe, M.R. Beasley, J.M. Triscone, M. Decroux, O. Fischer. A. Antognazza, K. Char: Appl. Phys. Lett. 70, 206 (1997)
141. A.G. Schrott, J.A. Misewich, V. Nayarajan, R. Ramesh: Appl. Phys. Lett. 82, 4770 (2003)
142. R. Ramesh, J. Lee, T. Scands, V.G. Keramidas. O. Auciello: Appl. Phys. Lett. 64, 2511 (1994)
143. P. Tiwari, T. Zheleva, J. Narayan: Appl. Phys. Lett. 63, 30 (1993)
144. D.K. Fork, F.A. Ponce, J.C. Tramontana, T.H. Geballe: Appl. Phys. Lett. 58, 2294 (1991)
145. A. Masuda, Y Yamanaka, M. Tazoe, Y. Yonezawa, A. Morimoto, T. Shimizu: Jpn. J. Appl. Phys. Part I 34, 5154 (1995)
146. Jing Zhao, Li Lu, C.V. Thompson, Y.F. Lu, W.D. Song: J. Cryst. Growth. 225, 173 (2001)
147. B. Yang, S. Aggarwal, A.M. Dhote, T.K. Song, R. Ramesh, J.S. Lee: Appl. Phys. Lett. 71, 356 (1997)
148. J. Narayan, P. Tiwari, X. Chen, J. Sinyh, R. Chowdhury, T. Zheleva: Appl. Phys. Lett. 61, 1290 (1992)
149. A.K. Sharma, J. Narayan, C. Jin, A. Kvit, S. Chattopadhyay, C. Lee: Appl. Phys. Lett. 76, 1458 (2000)
150. W.M. Gilmore III, S. Chattopadhyay, A. Kvit, A.K. Sharma, C.B. Lee, W.J. Collis, J. Sankar, J. Narayan: J. Mater. Res. 18, 111 (2003)
151. F. Sanchez, C. Ferrater, X. Alcobe, J. Bassas, M.V. Garcia-Cuenca, M. Varela: Thin Solid Films 384, 200 (2001)
152. S.S. Kim, T.S. Kang, J.H. Je: J. Mater. Res. 15, 2881 (2000)
153. T.J. Zhu, L. Lu, C.V. Thompson: J. Cryst. Growth 273, 172 (2004)
154. 3 thin films on amorphous TiN buffered Si(100). In: The Fourth International Conference on Inorganic Materials (Antwerp. Belgium 2004)
155. R. Dat, D.J. Lichtenwalner, O. Auciello. A.I. Kingon: Appl. Phys. Lett. 64, 2673 (1994)
156. J. Yin. Z.G. Liu. Z.C. Wu: Appl. Phys. Lett. 75, 3396 (1999)
157. T.-F. Tseng, R.-P. Yang, K.-S. Liu: Appl. Phys. Lett. 70, 46 (1997)
158. T.J. Zhu, L. Lu: Trans. MRS J. 29, 1377 (2004)
159. K.-S. Liu, T.-F. Tseng, I.-N. Lin: Appl. Phys. Lett. 72, 1182 (1998)
160. S. Aggarwal, A.M. Dhote. H. Li, S. Ankem, R. Ramesh: Appl. Phys. Lett. 74, 230 (1999)
161. H.M. Christen, S.D. Silliman, K.S. Harshavardhan: Appl. Surf. Sci. 189, 216 (2002)
162. H.M. Christen. S.D. Silliman, K.S. Harshavardhan: Rev. Sci. Instrum. 72, 2673 (2001)
163. I. Stolichnov, A. Tagantsev, L. Colla, S. Gentil, S. Hiboux, J. Baborowski, P. Muralt, N. Setter: J. Appl. Phys. 88, 2154 (2000)
164. T. Tybell, P. Paruch, T. Giamarchi, J.M. Triscone: Phys. Rev. Lett. 89 (2002)
165. A. Gruverman, H. Tokumoto: Nano Lett. 1, 93 (2001)
166. V. Nayarajan, A. Roytburd, A. Stanishevsky, S. Prasertchoung, T. Zhao. L. Chen, J. Melnyailis, O. Auciello, R. Ramesh: Nature Mater. 2, 43 (2003)
167. F.D. Morrison, Y. Luo, I. Szafraniak, V. Nayarajan, R.B. Wehrspohn, M. Steinhart. J.H. Wendorff, N.D. Zakharov, L.D. Mishina, K.A. Vorotilov, A.S. Sigov, S. Nakabayashi, M. Alexe, R. Ramesh, J.F. Scott: Rev. Adv. Mater. Sci. 4, 114 (2003)
168. C.S. Ganpule, V. Nayarajan, H. Li, A.S. Ogale, D.E. Steinhauer, S. Aggarwal, L. Williams. R. Ramesh, P. De Wolf: Appl. Phys. Lett. 77, 292 (2000)
169. D. Fork, D. Fenner, R. Barton. J. Philips, G. Connell, J. Boyce, T. Geballe: Appl. Phys. Lett. 57, 1161 (1990)
170. D. Fork, F. Ponce, J. Tramontana, T. Geballe: Appl. Phys. Lett. 58, 2294 (1991)
171. A.K. Sharma, J. Narayan, C. Jin, A. Kvit, S. Chattopadhyay, C. Lee: Appl. Phys. Lett. 76, 1458 (2000)
172. T. Inoue, Y. Yamamoto, S. Koyama, S. Suzuki, Y. Ueda: Appl. Phys. Lett. 56, 1332 (1990)
173. S. Miura, T. Yoshitake, S. Matsubara, Y Miyasaka, N. Shohata, T. Satoh: Appl. Phys. Lett. 53, 1968 (1988)
174. H. Mori, H. Ishiwara: Jpn J. Appl. Phys. 30, L1415 (1991)