Hysteresis loops characteristics of Bi4Ti3O12 ferroelectric thin films with different configuration on Si substrates

Wuji Cailiao Xuebao/Journal of Inorganic Materials

Volumn 19, Issue 1, 2004, Pages 153-158

  Wang, Hua ^a  

^a GUILIN UNIVERSITY OF ELECTRONIC TECHNOLOGY   (China)

Author keywords

Ferroelectric thin films; P V hysteresis loops characteristics; Sol gel method

Indexed keywords

BISMUTH COMPOUNDS; HYSTERESIS; SILICON; SOL-GELS; TITANIUM COMPOUNDS;

FERROELECTRIC PROPERTIES; PRESSURE VOLUME HYSTERESIS LOOPS CHARACTERISTICS; SOL GEL METHOD;

FERROELECTRIC THIN FILMS;

EID: 1942539258     PISSN: 1000324X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. Scott J F, Araujo C A. Science, 1989, 246: 1400-1405.
2. Geideman W A. IEEE Trans. UFFC, 1991, 38: 70-741.
3. Wang Hua, Yu Jun, Zhou Wen-li, et al. Jpn. J. Appl. Phys., 2001, 40(3A): 1388-1390.
4. Ramesh R, Chan W K, Wilkens B, et al. Appl. Phys. Lett., 1992, 61(13): 1537-1539.
5. Black C T, Curtis F, Thomas J L. Appl. Phys. Lett., 1997, 71(13): 2041-2043.
6. Toyoda M, Hamaji Y, Tomono K, et al. Jpn. J. Appl. Phys., 1993, 32(9B): 4158-4162.
7. Rugar D, Hansma P. Physics Today, 1990, 43(10): 23-30.
8. Maffei N, Krupanidhi S B. J. Appl. Phys. 1992, 72(8): 3617-3621.