La0.5Sr0.5CoO3/Pb(Nb0.04Zr 0.28Ti0.68)O3/La0.5Sr 0.5CoO3 thin film heterostructures on Si using TiN/Pt conducting barrier

Applied Physics Letters

Volumn 71, Issue 3, 1997, Pages 356-358

  Yang, B ^a   Aggarwal, S ^a   Dhote, A M ^a   Song, T K ^a   Ramesh, R ^a   Lee, J S ^b  

^a UNIVERSITY OF MARYLAND   (United States)

^b LG Electronics Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001507134     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119536     Document Type: Article

References (12)

1. R. Ramesh, T. Sands, and V. G. Keramidas, Mater. Sci. Eng. B 22, 283 (1994).
2. A. L. Roytburd, Phase Transit. 45, 1 (1993).
3. B. Yang, T. K. Song, S. Aggarwal, A. M. Dhote, and R. Ramesh (unpublished).
4. A. M. Dhote, S. Madhukar, W. Wei, T. Venkatesan, R. Ramesh, and C. M. Cotell, Appl. Phys. Lett. 68, 1350 (1996).
5. T. Kawakubo (private communication): Toshiba RND Center, Toshiba Microelectronics Engineering Laboratory.
6. R. Ramesh, J. Lee, T. Sands, V. G. Keramidas, and O. Auciello, Appl. Phys. Lett. 64, 2511 (1994).
7. M. B. Lee, M. Kawasaki, M. Yoshimoto, and H. Koinuma, Jpn. J. Appl. Phys. 1 35, L574 (1996).
8. C. Y. Ting and M. Wittmer, Thin Solid Films 96, 327 (1982).
9. P. Tiwari, X. D. Wu, S. R. Foltyn, Q. X. Jia, I. H. Campbell, P. A. Arendt, T. E. Muenchausen, D. E. Peterson, T. E. Mitchell, and J. Narayan. Appl. Phys. Lett. 65, 2693 (1994).
10. J. T. Cheung, P. E. D. Morgan, D. H. Lowndes, X. Y. Zheng, and J. Breen, Appl. Phys. Lett. 62, 2045 (1993).
11. R. Ramesh, T. Sands, and V. G. Keramidas, Appl. Phys. Lett. 63, 731 (1993).
12. J. S. Speck, A. Seifert, W. Pompe, and R. Ramesh, J. Appl. Phys. 76, 477 (1994).